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Jun-29-2004
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P3057LCG
SOT-89
Lead-Free
NIKO-SEM
DYNAMIC
Input Capacitance
Ciss
450
Output Capacitance
Coss
200
Reverse Transfer Capacitance
Crss
VGS = 0V, VDS = 15V, f = 1MHz
60
pF
Total Gate Charge
2
Qg
15
Gate-Source Charge
2
Qgs
2.0
Gate-Drain Charge
2
Qgd
VDS = 0.5V(BR)DSS, VGS = 10V,
ID = 6A
7.0
nC
Turn-On Delay Time
2
td(on)
6.0
Rise Time
2
tr
VDS = 15V, RL = 1Ω
6.0
Turn-Off Delay Time
2
td(off)
ID ≅ 12A, VGS = 10V, RGS = 2.5Ω
20
Fall Time
2
tf
5.0
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
IS
2.3
Pulsed Current
3
ISM
4
A
Forward Voltage
1
VSD
IF = IS, VGS = 0V
1.5
V
1Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
REMARK: THE PRODUCT MARKED WITH “P3057G”, DATE CODE or LOT #
Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.