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RM50HG-12S Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor |
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RM50HG-12S Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor |
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2 / 2 page  Sep.1998 Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Ratings Symbol RM50HG-12S Units Peak Reverse Blocking Voltage (Repetitive) VRRM 600 Volts Peak Reverse Blocking Voltage (Non-Repetitive) VRSM 720 Volts DC Reverse Blocking Voltage VR(DC) 480 Volts DC Current, TC = 80°C (Resistive Load) IF(DC) 50 Amperes Peak Half-Cycle Surge (Non-Repetitive) On-State Current (60Hz) IFSM 1000 Amperes Storage Temperature Tstg -40 to +125 °C Operating Temperature Tj -40 to +150 °C Maximum Mounting Torque M3 Mounting Screw — 0.59 ~ 0.98 N · m Module Weight (Typical) — 10 Grams Electrical and Thermal Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Max. Units Blocking State Maximums Reverse Leakage Current, Peak IRRM VRRM applied, Tj = 25°C 0.1 mA VRRM applied, Tj = 125°C 1.0 mA Conducting State Maximums Forward Voltage Drop VFM Tj = 25°C, IFM = 200A 4.0 Volts Switching Minimums Reverse Recovery Time trr IFM = 200A, Tj = 150°C 0.2 µs di/dt = -1000A/ µs, VR = 300V Lead Integrity — Tension Load: 2.5 kg 30.0 s — Bending Load: 1 kg bent to 90 ° 2.0 times Thermal Maximums Junction to Case Thermal Resistance Rth(j-c) Junction to case 0.5 °C/Watt Contact Thermal Resistance Rth(c-f) Case to Fin, Thermal Grease Applied 0.5 °C/Watt *Maximum ratings unless otherwise specified MITSUBISHI FAST RECOVERY DIODE MODULES RM50HG-12S HIGH SPEED SWITCHING USE NON-INSULATED TYPE FORWARD VOLTAGE DROP, VF, (VOLTS) MAXIMUM FORWARD CHARACTERISTIC 1.0 2.0 3.0 4.0 5.0 6.0 101 102 103 Tj = 25 oC TIME (S) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (JUNCTION TO CASE) 10-3 10-2 100 101 100 10-1 0 0.1 0.2 0.3 0.4 0.5 CYCLES (60Hz) RATED SURGE (NON-REPETITIVE) FORWARD CURRENT 100 101 102 0 200 400 600 800 1000 |
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