BUV48AFI datasheet(2/7 Pages) STMICROELECTRONICS

Part #	BUV48AFI

Description	HIGH POWER NPN SILICON TRANSISTORS

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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THERMAL DATA

TO-3

TO-218

ISOWATT218

Rthj-case

Thermal Resistance Junction-case

Max

1

2.2

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off Current

(VBE = 0)

VCE = rated VCES

VCE = rated VCES,

Tc = 125

oC

200

2

µA

mA

ICER

Collector Cut-off Current

(RBE = 10

Ω)

VCE = rated VCER

VCE = rated VCER,

Tc = 125

oC

500

4

µA

mA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

1

mA

VCEO(SUS)

∗ Collector-Emitter Sustaining

Voltage (IB = 0)

IC = 200 mA

L= 25mH

for BUX48

for BUX48A/V48A/V48AFI

400

450

V

VEBO

Emitter-Base Voltage

(IC = 0)

IE = 50 mA

7

30

V

VCE(sat)

∗ Collector-Emitter Saturation

Voltage

for BUX48

IC = 10 A

IB = 2 A

IC = 15 A

IB = 4 A

IC = 15 A

IB = 3 A

for BUX48A/V48A/V48AFI

IC = 8 A

IB = 1.6 A

IC = 12 A

IB = 2.4 A

1.5

3.5

5

1.5

5

V

VBE(sat)

∗ Base-Emitter Saturation

Voltage

for BUX48

IC = 10 A

IB = 2 A

for BUX48A/V48A/V48AFI

IC = 8 A

IB = 1.6 A

1.6

V

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %

RESISTIVE SWITCHING TIMES

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ton

Turn-on Time

for BUX48

VCC = 150 V

IC = 10 A

IB1 = 2 A

for BUX48A/V48A/V48AFI

VCC = 150 V

IC = 8 A

IB1 = 1.6 A

1

µs

ts

Storage Time

for BUX48

VCC = 150 V

IC = 10 A

IB1 = - IB2 = 2 A

for BUX48A/V48A/V48AFI

VCC = 150 V

IC = 8 A

IB1 = - IB2 = 1.6 A

3

µs

tf

Fall Time

for BUX48

VCC = 150 V

IC = 10 A

IB1 = - IB2 = 2 A

for BUX48A/V48A/V48AFI

VCC = 150 V

IC = 8 A

IB1 = - IB2 = 1.6 A

0.8

µs

BUX48 / BUX48A / BUV48A / BUV48AFI

2/7

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