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BUZ72A Datasheet(PDF) 2 Page - STMicroelectronics

Part # BUZ72A
Description  N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BUZ72A Datasheet(HTML) 2 Page - STMicroelectronics

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THERMAL DATA
Rthj-case
Rthj-amb
Thermal Resist ance Junct ion-case
Max
Thermal Resist ance Junct ion-ambient
Max
2.14
62.5
oC/W
oC/W
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Value
Uni t
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max,
δ <1%)
11
A
EAS
Single Pulse Avalanche Energy
(st arting Tj =25
oC, I
D =IAR,VDD =25 V)
36
mJ
EAR
Repet itive Avalanche Energy
(pulse width limited by Tj max,
δ <1%)
9mJ
IAR
Avalanche Current, Repetitive or Not-Repetitive
(T c = 100
oC, pulse width limited by Tj max, δ <1%)
7A
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
OFF
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID =250
µAVGS = 0
100
V
IDSS
Zero Gate Volt age
Drain Current (VGS =0)
VDS =Max Rating
VDS =Max Rating
Tj =125
oC
250
1000
µA
µA
IGSS
Gate-body Leakage
Current (VDS =0)
VGS =
± 20 V
± 100
nA
ON (
∗)
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
VGS(th)
Gate Threshold Voltage VDS =VGS
ID =250
µA2
2.9
4
V
RDS(on)
St atic Drain-source On
Resist ance
VGS =10 V
I D =5 A
0.23
0. 25
DYNAMIC
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
gfs (
∗)Forward
Transconductance
VDS =25 V
ID =5 A
2.7
4.5
S
Ciss
Coss
Crss
I nput Capacitance
Output Capacit ance
Reverse Transfer
Capacitance
VDS = 25V
f = 1MHz
VGS =0
330
90
25
450
120
40
pF
pF
pF
SWITCHING
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
td(on)
tr
td(off)
tf
Turn-on Time
Rise Time
Turn-off Delay Time
Fall Time
VDD =50 V
ID =5.5 A
RGS =4.7
VGS =10 V
10
50
25
20
15
75
40
30
ns
ns
ns
ns
BUZ72A
2/7


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