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BUZ72A Datasheet(PDF) 2 Page - STMicroelectronics |
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BUZ72A Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 7 page THERMAL DATA Rthj-case Rthj-amb Thermal Resist ance Junct ion-case Max Thermal Resist ance Junct ion-ambient Max 2.14 62.5 oC/W oC/W AVALANCHE CHARACTERISTICS Symbol Parameter Value Uni t IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ <1%) 11 A EAS Single Pulse Avalanche Energy (st arting Tj =25 oC, I D =IAR,VDD =25 V) 36 mJ EAR Repet itive Avalanche Energy (pulse width limited by Tj max, δ <1%) 9mJ IAR Avalanche Current, Repetitive or Not-Repetitive (T c = 100 oC, pulse width limited by Tj max, δ <1%) 7A ELECTRICAL CHARACTERISTICS (Tcase =25 oC unless otherwise specified) OFF Symbol Parameter Test Condi tions Mi n. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID =250 µAVGS = 0 100 V IDSS Zero Gate Volt age Drain Current (VGS =0) VDS =Max Rating VDS =Max Rating Tj =125 oC 250 1000 µA µA IGSS Gate-body Leakage Current (VDS =0) VGS = ± 20 V ± 100 nA ON ( ∗) Symbol Parameter Test Condi tions Mi n. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS =VGS ID =250 µA2 2.9 4 V RDS(on) St atic Drain-source On Resist ance VGS =10 V I D =5 A 0.23 0. 25 Ω DYNAMIC Symbol Parameter Test Condi tions Mi n. Typ. Max. Unit gfs ( ∗)Forward Transconductance VDS =25 V ID =5 A 2.7 4.5 S Ciss Coss Crss I nput Capacitance Output Capacit ance Reverse Transfer Capacitance VDS = 25V f = 1MHz VGS =0 330 90 25 450 120 40 pF pF pF SWITCHING Symbol Parameter Test Condi tions Mi n. Typ. Max. Unit td(on) tr td(off) tf Turn-on Time Rise Time Turn-off Delay Time Fall Time VDD =50 V ID =5.5 A RGS =4.7 Ω VGS =10 V 10 50 25 20 15 75 40 30 ns ns ns ns BUZ72A 2/7 |
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