SN65HVD3082E,SN75HVD3082E

SN65HVD3085E,SN65HVD3088E

SLLS562D − MARCH 2003 − REVISED SEPTEMBER 2005

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11

DGK Package

THERMAL CHARACTERISTICS

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

ΘJA

Junction-to-ambient thermal resistance(1)

Low-k(2) board, no air flow

266

°C/W

ΘJA

Junction-to-ambient thermal resistance(1)

High-k(3) board, no air flow

180

°C/W

ΘJB

Junction-to-board thermal resistance

High-k(3) board, no air flow

108

°C/W

ΘJC

Junction-to-case thermal resistance

66

°C/W

P(AVG) Average power dissipation

RL = 54 Ω, Input to D is a 200 kbps

50% duty cycle square wave

HVD3082E

203

mW

P(AVG) Average power dissipation

L

50% duty cycle square wave

Vcc at 5.5 V, TJ = 130°C

HVD3082E

203

mW

P(AVG) Average power dissipation

RL = 54 Ω, Input to D is a 1 Mbps

50% duty cycle square wave

Vcc at 5.5 V, TJ = 130°C

HVD3085E

205

mW

P(AVG) Average power dissipation

RL = 54 Ω, Input to D is a 20 Mbps

50% duty cycle square wave

Vcc at 5.5 V, TJ = 130°C

HVD3088E

276

mW

TA

Ambient air temperature

High k board model

−40

93

°C

TA

Ambient air temperature

Low k board model

−40

75

°C

TSD

Thermal shut-down junction temperature

165

°C

(1) See TI application note literature number SZZA003, Package Thermal Characterization Methodologies, for an explanation of this parameter.

(2) JESD51-3 Low Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages

(3) JESD51-7 High Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages