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STTH12S06 Datasheet(PDF) 3 Page - STMicroelectronics |
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STTH12S06 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 6 page STTH12S06 Characteristics 3/6 Figure 3. Relative variation of thermal impedance, junction to case, versus pulse duration Figure 4. Peak reverse recovery current versus dIF/dt (typical values) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 Z th(j-c)/Rth(j-c) Single pulse tp(s) 0 1 2 3 4 5 6 7 8 9 10 11 12 10 100 1000 I RM(A) IF = 12 A VR=400V Tj=125°C Tj=25°C dIF/dt(A/µs) Figure 5. Reverse recovery time versus dIF/dt (typical values) Figure 6. Reverse recovery charges versus dIF/dt (typical values) Figure 7. Junction capacitance versus reverse voltage applied (typical values) 0 20 40 60 80 100 120 0 50 100 150 200 250 300 350 400 450 500 550 600 t RR(ns) IF = 12 A VR=400V Tj=125°C Tj=25°C dIF/dt(A/µs) 0 20 40 60 80 100 120 140 160 180 200 220 240 260 10 100 1000 Q RR(nC) IF = 12 A VR=400V Tj=125°C Tj=25°C dIF/dt(A/µs) C(pF) 10 100 1 10 100 1000 F=1MHz V osc=30mVRMS T j=25°C VR(V) |
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