Part Name
         Description
2SC3871

 Silicon NPN triple diffusion planar type ( 3 Page)


PANASONIC
100% 
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 2 page
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2
Power Transistors
2SC3871
PC —Ta
IC —VCE
VCE(sat) —IC
VBE(sat) —IC
hFE —IC
fT —IC
Cob —VCB
ton, tstg, tf — IC
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
0
80
60
20
50
70
40
10
30
(1)
(3)
(2)
(1) T
C=Ta
(2) With a 100
× 100 × 2mm
Al heat sink
(3) Without heat sink
(P
C=2.0W)
Ambient temperature Ta (˚C)
012
10
8
26
4
0
10
8
6
4
2
T
C=25˚C
50mA
100mA
150mA
200mA
250mA
300mA
350mA
400mA
450mA
500mA
600mA
I
B=1000mA
Collector to emitter voltage V
CE
(V)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C/IB=5
100˚C
25˚C
T
C=–25˚C
Collector current I
C
(A)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C/IB=5
T
C=100˚C
25˚C
–25˚C
Collector current I
C
(A)
0.01
0.1
1
10
0.03
0.3
3
1
3
10
30
100
300
1000
3000
10000
25˚C
–25˚C
T
C=100˚C
V
CE=5V
Collector current I
C
(A)
0.01
0.1
1
10
0.03
0.3
3
0.1
0.3
1
3
10
30
100
300
1000
V
CE=10V
f=10MHz
T
C=25˚C
Collector current I
C
(A)
0.1
1
10
100
0.3
3
30
1
3
10
30
100
300
1000
3000
10000
I
E=0
f=1MHz
T
C=25˚C
Collector to base voltage V
CB
(V)
05
4
13
2
0.01
0.03
0.1
0.3
1
3
10
30
100
t
stg
t
f
t
on
Pulsed t
w=1ms
Duty cycle=1%
I
C/IB=5
(2I
B1=–IB2)
V
CC=150V
T
C=25˚C
Collector current I
C
(A)
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
Non repetitive pulse
T
C=25˚C
I
CP
DC
10ms
1ms
t=0.5ms
I
C
Collector to emitter voltage V
CE
(V)
1  2  3 



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