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| 2SC3871 |
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PANASONIC |
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2 page
2 Power Transistors 2SC3871 PC —Ta IC —VCE VCE(sat) —IC VBE(sat) —IC hFE —IC fT —IC Cob —VCB ton, tstg, tf — IC Area of safe operation (ASO) 0 160 40 120 80 140 20 100 60 0 80 60 20 50 70 40 10 30 (1) (3) (2) (1) T C=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (P C=2.0W) Ambient temperature Ta (˚C) 012 10 8 26 4 0 10 8 6 4 2 T C=25˚C 50mA 100mA 150mA 200mA 250mA 300mA 350mA 400mA 450mA 500mA 600mA I B=1000mA Collector to emitter voltage V CE (V) 0.01 0.1 1 10 0.03 0.3 3 0.01 0.03 0.1 0.3 1 3 10 30 100 I C/IB=5 100˚C 25˚C T C=–25˚C Collector current I C (A) 0.01 0.1 1 10 0.03 0.3 3 0.01 0.03 0.1 0.3 1 3 10 30 100 I C/IB=5 T C=100˚C 25˚C –25˚C Collector current I C (A) 0.01 0.1 1 10 0.03 0.3 3 1 3 10 30 100 300 1000 3000 10000 25˚C –25˚C T C=100˚C V CE=5V Collector current I C (A) 0.01 0.1 1 10 0.03 0.3 3 0.1 0.3 1 3 10 30 100 300 1000 V CE=10V f=10MHz T C=25˚C Collector current I C (A) 0.1 1 10 100 0.3 3 30 1 3 10 30 100 300 1000 3000 10000 I E=0 f=1MHz T C=25˚C Collector to base voltage V CB (V) 05 4 13 2 0.01 0.03 0.1 0.3 1 3 10 30 100 t stg t f t on Pulsed t w=1ms Duty cycle=1% I C/IB=5 (2I B1=–IB2) V CC=150V T C=25˚C Collector current I C (A) 1 10 100 1000 3 30 300 0.01 0.03 0.1 0.3 1 3 10 30 100 Non repetitive pulse T C=25˚C I CP DC 10ms 1ms t=0.5ms I C Collector to emitter voltage V CE (V) |
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