NCP603SNADJT1G datasheet(4/13 Pages) ONSEMI

Part #	NCP603SNADJT1G

Description	300 mA High Performance CMOS LDO Regulator with Enable and Enhanced ESD Protection

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NCP603

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ELECTRICAL CHARACTERISTICS (Vin = 1.750 V, Vout = 1.250 V (adjustable version)), (Vin = Vout + 0.5 V (fixed version)),

Cin = Cout =1.0 mF, for typical values TA = 25°C, for min/max values TA = -40°C to 125°C, unless otherwise specified.) (Note 10)

Characteristic

Symbol

Test Conditions

Min

Typ

Max

Unit

Output Noise Voltage (Note 11)

Vn

f = 10 Hz to 100 kHz

-

50

-

mVrms

Output Short Circuit Current

Isc

500

650

900

mA

Dropout Voltage

1.3 V

1.5 V

1.8 V

2.7 V to 5.0 V

VDO

Measured at: Vout – 2.0%

Iout = 150 mA

-

175

150

125

75

250

225

175

125

mV

Dropout Voltage

1.3 V

1.5 V

1.8 V

2.7 V to 5.0 V

VDO

Measured at: Vout – 2.0%

Iout = 300 mA

-

375

350

245

157

480

400

340

230

mV

Output Current Limit

Iout(max)

300

650

-

mA

General

Disable Current

IDIS

ENABLE = 0 V, Vin = 6 V

-40

°C ≤ TA ≤ 85°C

-

0.01

1.0

mA

Ground Current

IGND

ENABLE = 0.9 V,

Iout = 1.0 mA to 300 mA

-

145

180

mA

Thermal Shutdown Temperature (Note 11)

TSD

-

175

-

°C

Thermal Shutdown Hysteresis (Note 11)

TSH

-

10

-

°C

ADJ Input Bias Current

IADJ

-0.75

-

0.75

mA

Chip Enable

ENABLE Input Threshold Voltage

Vth(EN)

V

Voltage Increasing, Logic High

0.9

-

Voltage Decreasing, Logic Low

-

0.4

Enable Input Bias Current (Note 11)

IEN

-

3.0

100

nA

Timing

Output Turn On Time (Note 11)

1.25 V to 3.5 V

5.0 V

tEN

ENABLE = 0 V to Vin

-

15

30

25

50

ms

10. Performance guaranteed over the indicated operating temperature range by design and/or characterization, production tested at TJ = TA =

25

°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.

11. Values based on design and/or characterization.

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