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BYW29G-200 Datasheet(PDF) 2 Page - STMicroelectronics |
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BYW29G-200 Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 5 page Symbol Parameter Value Unit Rth (j-c) Junction to case thermal resistance 2.8 °C/W THERMAL RESISTANCE Symbol Parameter Test Conditions Min. Typ. Max. Unit IR * Reverse leakage current VR =VRRM Tj =25 °C10 µA Tj = 100 °C 0.6 mA VF** Forward voltage drop IF =5 A Tj = 125 °C 0.85 V IF =10 A Tj = 125 °C 1.05 IF =10 A Tj =25 °C 1.15 Pulse test : * tp = 5 ms, duty cycle < 2 % ** tp = 380 µs, duty cycle < 2 % To evaluate the conduction losses use the following equation : P = 0.65 x IF(AV) + 0.040 IF 2 (RMS) STATIC ELECTRICAL CHARACTERISTICS PIN OUT configuration in D 2PAK: Symbol Parameter Test Conditions Min. Typ. Max. Unit trr Reverse recovery time Tj =25 °CIF = 0.5A Irr = 0.25 A IR =1A 25 ns Tj =25 °CIF =1A dIF/dt = -50A/ µsVR = 30V 35 tfr Forward recovery time Tj =25 °CIF =1A dIF/dt = 100A/ µs VFR = 1.1 x VF max 15 ns VFP Peak forward voltage Tj =25 °CIF =1A dIF/dt = 100A/ µs2 V RECOVERY CHARACTERISTICS BYW29G-200 2/5 |
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