BYW29G-200 datasheet(4/5 Pages) STMICROELECTRONICS

Part #	BYW29G-200

Description	HIGH EFFICIENCY FAST RECOVERY DIODES

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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C(pF)

VR(V)

F=1Mhz Tj=25 C

o

Fig.7 : Junction capacitance versus reverse volt-

age applied (Typical values).

QRR(nC)

IF=IF(av)

90%CONFIDENCE Tj -10 0

C

dIF/dt(A/us)

O

Fig.8 : Recovery charges versus dIF/dt.

Tj(

C)

QRR;IRM[Tj]/QRR;IRM[Tj=125 C]

IRM

QRR

o

Fig.10 : Dynamic parameters versus junction tem-

perature.

IRM(A)

IF=IF(av)

90% CONFIDENCE

dIF/dt(A/us)

Tj-100 C

O

Fig.9 : Peak reverse current versus dIF/dt.

BYW29G-200

4/5

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