BYW80-200 datasheet(4/6 Pages) STMICROELECTRONICS

Part #	BYW80-200

Description	HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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4 / 6 page

0.001

0.01

0.1

1

10

0

10

20

30

40

50

60

70

80

IM(A)

Tc=25

C

o

Tc=50 C

o

Tc= 95 C

o

IM

t

=0.5

t(s)

Fig.7 : Non repetitive surge peak forward current

versus overload duration.

(ISOWATT220AC)

0

20

40

60

80

100

120

140

160

0

1

2

3

4

5

6

7

8

9

10

11

12

o

Tamb( C)

Rth(j-a)=15

C/W

o

Rth(j-a)=Rth(j-c)

T

=tp/T

tp

=0.5

F(av)(A)

I

Fig.8

:

Average

current

versus

ambient

temperature.

(duty cycle : 0.5) (TO-220AC)

0

20

40

60

80

100

120

140

160

0

1

2

3

4

5

6

7

8

9

10

11

12

o

Tamb( C)

Rth(j-a)=15

C/W

o

Rth(j-a)=Rth(j-c)

T

=tp/T

tp

=0.5

F(av)(A)

I

Fig.9

:

Average

current

versus

ambient

temperature.

(duty cycle : 0.5) (ISOWATT220AC)

C(pF)

VR(V)

Fig.10 : Junction capacitance versus reverse

voltage applied (Typical values).

0.001

0.01

0.1

1

0

10

20

30

40

50

60

70

80

90

100

IM(A)

Tc=25

C

o

Tc= 75

C

o

Tc=120 C

o

IM

t

=0.5

t(s)

Fig.6 : Non repetitive surge peak forward current

versus overload duration.

(TO-220AC)

QRR(nC)

90% CONFIDENCE

Tj=125

C

o

IF=IF(av)

dIF/dt(A/us)

Fig.11 : Recovery charges versus dIF/dt.

BYW80(F)-200

4/6

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