BTA202X-800D datasheet(7/12 Pages) NXP

Part #	BTA202X-800D

Description	2 A Three-quadrant triacs high commutation

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Manufacturer	NXP [NXP Semiconductors]

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BTA202X_SER_D_E_1

Product data sheet

Rev. 01 — 7 February 2008

7 of 12

NXP Semiconductors

BTA202X series D and E

2 A Three-quadrant triacs high commutation

8.

Dynamic characteristics

Table 7.

Dynamic characteristics

Symbol Parameter

Conditions

BTA202X-600D

BTA202X-800D

BTA202X-600E

BTA202X-800E

Unit

Min

Typ

Max

Min

Typ

Max

dVD/dt

rate of rise of

off-state voltage

VDM = 0.67 × VDRM(max); Tj = 125 °C;

exponential waveform; R(G-MT1) = 220 Ω

-

350

-

500

-

V/

µs

dIcom/dt rate of change of

commutating

current

VDM = 400 V; Tj = 125 °C; IT(RMS) =2A;

dVcom/dt=20V/µs; gate open circuit

1.0

-

2.0

-

A/ms

VDM = 400 V; Tj = 125 °C; IT(RMS) = 2 A;

dVcom/dt=10V/µs; gate open circuit

1.2

-

2.3

-

A/ms

tgt

gate-controlled

turn-on time

ITM = 20 A; VD =VDRM(max); IG = 0.1 A;

dIG/dt=5A/µs

-2

-

2

-

µs

(1) T2

− G−

(2) T2+ G

−

(3) T2+ G+

Fig 7.

Normalized gate trigger voltage as a function

of junction temperature

Fig 8.

Normalized gate trigger current as a function

of junction temperature

Tj (°C)

−50

150

100

050

001aab101

0.8

1.2

1.6

0.4

VGT

VGT(25°C)

IGT

IGT(25°C)

Tj (°C)

−50

0

150

100

50

1

2

3

0

003aaa959

(1)

(2)

(3)

(1)

(2)

(3)

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