PESDXL5UF_V_Y_2

© NXP B.V. 2008. All rights reserved.

Product data sheet

Rev. 02 — 8 January 2008

4 of 17

NXP Semiconductors

PESDxL5UF/V/Y

Low capacitance unidirectional fivefold ESD protection diode arrays

5.

Limiting values

[1]

Non-repetitive current pulse 8/20

µs exponential decay waveform according to IEC 61000-4-5.

[2]

Measured from pin 1, 3, 4, 5 or 6 to pin 2.

[1]

Device stressed with ten non-repetitive ESD pulses.

[2]

Measured from pin 1, 3, 4, 5 or 6 to pin 2.

Table 6.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per diode

peak pulse power

[1][2] -25

W

peak pulse current

[1][2] -

2.5

A

Per device

junction temperature

-

150

°C

ambient temperature

−65

+150

°C

storage temperature

−65

+150

°C

Table 7.

ESD maximum ratings

Symbol

Parameter

Conditions

Min

Max

Unit

Per diode

electrostatic discharge voltage

IEC 61000-4-2

(contact discharge)

[1][2] -20

kV

MIL-STD-883 (human

body model)

-10

kV

Table 8.

ESD standards compliance

Standard

Conditions

Per diode

IEC 61000-4-2; level 4 (ESD)

> 15 kV (air); > 8 kV (contact)

MIL-STD-883; class 3 (human body model)

> 4 kV