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PESD5V0S4UF Datasheet(PDF) 1 Page - NXP Semiconductors |
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PESD5V0S4UF Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 13 page 1. Product profile 1.1 General description Unidirectional quadruple ElectroStatic Discharge (ESD) protection diode arrays in a small SOT886 Surface-Mounted Device (SMD) plastic package designed to protect up to four signal lines from the damage caused by ESD and other transients. 1.2 Features 1.3 Applications 1.4 Quick reference data PESD3V3S4UF; PESD5V0S4UF Unidirectional quadruple ESD protection diode arrays Rev. 01 — 17 January 2008 Product data sheet I ESD protection of up to four lines I ESD protection up to 30 kV I Max. peak pulse power: PPP = 110 W I IEC 61000-4-2; level 4 (ESD) I Low clamping voltage: VCL =11V I IEC 61000-4-5 (surge); IPP =10A I Ultra low leakage current: IRM =4nA I AEC-Q101 qualified I Computers and peripherals I Communication systems I Audio and video equipment I Portable electronics I Cellular handsets and accessories Table 1. Quick reference data Tamb =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per diode VRWM reverse standoff voltage PESD3V3S4UF - - 3.3 V PESD5V0S4UF - - 5.0 V Cd diode capacitance f = 1 MHz; VR =0V PESD3V3S4UF - 110 300 pF PESD5V0S4UF - 85 220 pF |
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