PESDXL4UF_G_W_3

© NXP B.V. 2008. All rights reserved.

Product data sheet

Rev. 03 — 14 January 2008

7 of 17

NXP Semiconductors

PESDxL4UF/G/W

Low capacitance unidirectional quadruple ESD protection diode arrays

(1) PESD3V3L4UF; PESD3V3L4UG; PESD3V3L4UW

(2) PESD5V0L4UF; PESD5V0L4UG; PESD5V0L4UW

(1) PESD3V3L4UF; PESD3V3L4UG; PESD3V3L4UW

(2) PESD5V0L4UF; PESD5V0L4UG; PESD5V0L4UW

Fig 3.

Non-repetitive peak reverse current as a

function of pulse duration; maximum values

Fig 4.

Non-repetitive peak reverse power dissipation

as a function of pulse duration; maximum

values

(1) PESD3V3L4UF; PESD3V3L4UG; PESD3V3L4UW

(2) PESD5V0L4UF; PESD5V0L4UG; PESD5V0L4UW

Fig 5.

Diode capacitance as a function of reverse

voltage; typical values

Fig 6.

Relative variation of reverse current as a

function of junction temperature; typical values

006aab134

10

1

1

10

(A)

(1)

(2)

006aab135

10

1

10

(W)

1

(1)

(2)

006aab136

05

4

23

1

14

18

10

22

26

(pF)

6

(1)

(2)

006aab137

−75

−25

175

125

25

75

1

10