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DTV64D Datasheet(PDF) 8 Page - STMicroelectronics |
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DTV64D Datasheet(HTML) 8 Page - STMicroelectronics |
8 / 10 page 0 20 40 60 80 100 120 140 300 350 400 450 500 550 600 650 700 tfr(ns) dIF/dt(A/µs) IF=Ip 90% confidence Tj=125°C DTV56 DTV82 DTV110 Fig. 8-2: Forward recovery time versus dIF/dt. 0 20 40 60 80 100 120 140 400 450 500 550 600 650 700 750 800 tfr(ns) dIF/dt(A/µs) IF=Ip 90% confidence Tj=125°C DTV32 DTV64 DTV16 DTV16 DTV16 Fig. 8.1: Forward recovery time versus dIF/dt. 0 20 40 60 80 100 120 140 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Tj(°C) VFP,IRM,Qrr[Tj]/VFP,IRM,Qrr[Tj=125°C] VFP IRM Qrr Fig. 9: Dynamic parameters versus junction temperature. 1 1 10 100 200 10 100 200 C(pF) Tj=25°C F=1MHz VR(V) DTV110 DTV16 DTV16 DTV16 DTV82 DTV64 DTV56 DTV32 Fig. 10: Junction capacitance versus reverse voltage applied (typical values). 1E-2 1E-1 1E+0 1E+1 0.1 0.2 0.5 1.0 tp(s) K=[Zth(j-c)/Rth(j-c)] δ = 0.1 δ = 0.2 δ = 0.5 Single pulse T δ=tp/T tp Fig. 11-1: Relative variation of thermal impedance junction to case versus pulse duration (ISOWATT220AC). 1E-3 1E-2 1E-1 1E+0 0.1 0.2 0.5 1.0 tp(s) K=[Zth(j-c)/Rth(j-c)] δ = 0.1 δ = 0.2 δ = 0.5 Single pulse T δ=tp/T tp Fig. 12-2: Relative variation of thermal impedance junction to case versus pulse duration (TO-220AC). DTVseries 8/10 |
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Similar Description - DTV64D |
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