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843207CY-350T Datasheet(PDF) 4 Page - Integrated Device Technology |
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4 / 16 page IDT™ / ICS™ LVPECL FREQUENCY MARGINING SYNTHESIZER 4 ICS843207CY-350 REV. A DECEMBER 3, 2007 ICS843207-350 FEMTOCLOCKS™ CRYSTAL-TO-LVPECL 350MHZ FREQUENCY MARGINING SYNTHESIZER PRELIMINARY TABLE 5A. POWER SUPPLY DC CHARACTERISTICS, V CC = VCCO = 3.3V±5%, VCCO = VEE = O V, TA = 0°C TO 70°C ABSOLUTE MAXIMUM RATINGS Supply Voltage, V CC 4.6V Inputs, V I -0.5V to V CC + 0.5V Outputs, I O Continuous Current 50mA Surge Current 100mA Package Thermal Impedance, θ JA 65.7°C/W (0 mps) Storage Temperature, T STG -65°C to 150°C NOTE: Stresses beyond those listed under Absolute Maximum Ratings may cause per manent damage to the device. These ratings are stress specifications only. Functional op- eration of product at these conditions or any conditions beyond those listed in the DC Characteristics or AC Characteristics is not implied. Exposure to absolute maximum rating conditions for ex- tended periods may affect product reliability. l o b m y Sr e t e m a r a Ps n o i t i d n o C t s e Tm u m i n i Ml a c i p y Tm u m i x a Ms t i n U V C C e g a t l o V y l p p u S e r o C 5 3 1 . 33 . 35 6 4 . 3V V A C C e g a t l o V y l p p u S g o l a n AV C C 3 1 . 0 –3 . 3V C C V V O C C e g a t l o V y l p p u S t u p t u O 5 3 1 . 33 . 35 6 4 . 3V I E E t n e r r u C y l p p u S r e w o P 0 1 2A m I A C C t n e r r u C y l p p u S g o l a n A 3 1A m TABLE 5B. LVCMOS / LVTTL DC CHARACTERISTICS, V CC = VCCO = 3.3V±5%, VEE = O V, TA = 0°C TO 70°C l o b m y Sr e t e m a r a Ps n o i t i d n o C t s e Tm u m i n i Ml a c i p y Tm u m i x a Ms t i n U V H I e g a t l o V h g i H t u p n IV C C V 3 . 3 =2 V C C 3 . 0 +V V L I e g a t l o V w o L t u p n IV C C V 3 . 3 =3 . 0 -8 . 0V I H I t u p n I t n e r r u C h g i H , N I G R A M , K L C _ F E R , L E S _ L L P n , E D O M L E S _ L A T X n , R M V C C V = N I 5 6 4 . 3 =0 5 1A µ ] 3 1 : 0 [ L E SV C C V = N I 5 6 4 . 3 =5 A µ I L I t u p n I t n e r r u C w o L , N I G R A M , K L C _ F E R , L E S _ L L P n , E D O M L E S _ L A T X n , R M V C C , V 5 6 4 . 3 = V N I V 0 = 5 -A µ ] 3 1 : 0 [ L E S V C C , V 5 6 4 . 3 = V N I V 0 = 0 5 1 -A µ Δ /tΔv n o i t i s n a r T t u p n I e t a R ll a F / e s i R E D O M , ] 3 1 : 0 [ L E S 0 2V / s n |
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