FEATURES

molded plastic technique

flammability classification 94V-0

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

GBU

GBU

GBU

GBU

GBU

GBU

GBU

10005C

1001C

1002C

1004C

1006C

1008C

1010C

15005C

1501C

1502C

1504C

1506C

1508C

1510C

25005C

2501C

2502C

2504C

2506C

2508C

2510C

Maximum Recurrent Peak Reverse Voltage

50

100

200

400

600

800

1000

V

Maximum RMS Voltage

30

70

140

280

420

560

700

V

Maximum DC Blocking Voltage

50

100

200

400

600

800

1000

V

Maximum Average Forward (with heatsink Note 2)

Rectified Current

Peak Forward Surage Current

8.3ms Single Half Sine-Wave

Super Imposed on Rated Load (JEDEC Method)

Maximum Forward Voltage at 5.0/7.5/12.5A DC

V

Maximum DC Reverse Current

at Rated DC Blocking Voltage

I

I

A

Typical Junction Capacitance Per Element (Note1)

pF

Typical Thermal Resistance (Note2)

℃/W

Operating Temperature Range

℃

Storage Temperature Range

℃

NOTES: 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

2.Device mounted on 100mm*100mm*1.6mm cu plate heatsink.

~ 287 ~

GBU10/15/25(C)SERIES

A

1.1

-55 to +150

10

uA

A

-55 to +125

200

70

2.2

500

Rating at 25℃ ambient temperature unless otherwise specified.

REVERSE VOLTAGE

-

50 to 1000Volts

FORWARD CURRENT

- 10/15/25 Amperes

Dimensions in inches and (milimeters)

SILICON BRIDGE RECTIFIERS

SYMBOL

UNIT

CHARACTERISTICS

Single phase, half wave ,60Hz, resistive or inductive load.

For capacitive load, derate current by 20%

GBU-C

GBU

10C

25

240

300

400

GBU

15C

GBU

25C

4.2

3.2

3.0

15

10

.018(.46)

.022(.56)

.126(3.2)

.114(2.9)

.156(3.95)

.148(3.75)

.190

.210

(4.8)

(5.3)

(5.3)

(4.8)

.210

.190

.190

.210

(4.8)

(5.3)

.080(2.03)

.065(1.65)

.085(2.16)

.100(2.54)

.047(1.2)

.035(0.9)

.680(17.27)

.720(18.29)

.752(19.1)

.720(18.3)

CHAMFER

3.2*3.2

.232(5.9)

.224(5.7)

.154(3.9)

.146(3.7)

.860(21.8)

.874(22.2)

.063(1.6)

.079(2.0)