FEATURES

molded plastic technique

flammability classification 94V-0

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

GBU

GBU

GBU

GBU

GBU

GBU

GBU

8005C

801C

802C

804C

806C

808C

810C

Maximum Recurrent Peak Reverse Voltage

50

100

200

400

600

800

1000

V

Maximum RMS Voltage

30

70

140

280

420

560

700

V

Maximum DC Blocking Voltage

50

100

200

400

600

800

1000

V

Maximum Average Forward (with heatsink Note 2)

Rectified Current

Peak Forward Surage Current

8.3ms Single Half Sine-Wave

Super Imposed on Rated Load (JEDEC Method)

Maximum Forward Voltage at 4.0A DC

V

Maximum DC Reverse Current

at Rated DC Blocking Voltage

I

I

A

Typical Junction Capacitance Per Element (Note1)

pF

Typical Thermal Resistance (Note2)

℃/W

Operating Temperature Range

℃

Storage Temperature Range

℃

NOTES: 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

2.Device mounted on 75mm*75mm*1.6mm cu plate heatsink.

UNIT

SYMBOL

CHARACTERISTICS

Single phase, half wave ,60Hz, resistive or inductive load.

For capacitive load, derate current by 20%

Rating at 25℃ ambient temperature unless otherwise specified.

REVERSE VOLTAGE

- 50 to 1000Volts

FORWARD CURRENT -

8.0 Amperes

Dimensions in inches and (milimeters)

SILICON BRIDGE RECTIFIERS

-55 to +125

166

60

2.2

500

uA

A

200

8.0

3.2

~ 285 ~

GBU8005C thru GBU810C

A

1.0

-55 to +150

10

GBU-C

.018(.46)

.022(.56)

.126(3.2)

.114(2.9)

.156(3.95)

.148(3.75)

.190

.210

(4.8)

(5.3)

(5.3)

(4.8)

.210

.190

.190

.210

(4.8)

(5.3)

.080(2.03)

.065(1.65)

.085(2.16)

.100(2.54)

.047(1.2)

.035(0.9)

.680(17.27)

.720(18.29)

.752(19.1)

.720(18.3)

CHAMFER

3.2*3.2

.232(5.9)

.224(5.7)

.154(3.9)

.146(3.7)

.860(21.8)

.874(22.2)

.063(1.6)

.079(2.0)