FEATURES

molded plastic technique

flammability classification 94V-0

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

TBU

TBU

TBU

TBU

TBU

TBU

TBU

10005

1001

1002

1004

1006

1008

1010

15005

1501

1502

1504

1506

1508

1510

25005

2501

2502

2504

2506

2508

2510

35005

3501

3502

3504

3506

3508

3510

Maximum Recurrent Peak Reverse Voltage

50

100

200

400

600

800

1000

V

Maximum RMS Voltage

30

70

140

280

420

560

700

V

Maximum DC Blocking Voltage

50

100

200

400

600

800

1000

V

Maximum Average Forward (with heatsink Note 2)

Rectified Current

Peak Forward Surage Current

8.3ms Single Half Sine-Wave

Super Imposed on Rated Load (JEDEC Method)

Maximum Forward Voltage at 5.0/7.5/12.5/17.5A DC

V

Maximum DC Reverse Current

at Rated DC Blocking Voltage

Operating Temperature Range

℃

Storage Temperature Range

℃

NOTES: 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

2.Device mounted on 100mm*100mm*1.6mm cu plate heatsink.

-55 to +125

~ 329 ~

TBU10/15/25/35 SERIES

A

-55 to +125

10.0

uA

500

Rating at 25℃ ambient temperature unless otherwise specified.

SYMBOL

A

REVERSE VOLTAGE

-

50 to 1000Volts

FORWARD CURRENT - 10/15/25/35 Amperes

Dimensions in inches and (milimeters)

SILICON BRIDGE RECTIFIERS

UNIT

CHARACTERISTICS

Single phase, half wave ,60Hz, resistive or inductive load.

For capacitive load, derate current by 20%

TBU

10

10

15

25

35

240

300

400

400

TBU

15

TBU

25

TBU

35

3.0

3.2

3.6

4.2

TBU

.935(23.7)

.895(22.7)

.709(18.0)

.748(19.0)

300

(7.5)

.780(19.8)

.740(18.8)

(25.4)

1.00

MIN.

.052(1.3)DIA.

.048(1.2)TYP.

.220(5.6)

.180(4.6)

.205(5.2)

.244(6.2)

.15? X23L

(3.8? X5.7L)

HOLE THRU

.087(2.2)

.071(1.8)

1.0

1.1