 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
E44NB Datasheet(PDF) 2 Page - Estek Electronics Co. Ltd |
|
||||||||||||||||||||||||||||||
E44NB Datasheet(HTML) 2 Page - Estek Electronics Co. Ltd |
|
|
2 / 2 page  2 S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 25A, VGS = 0V trr Reverse Recovery Time ––– 63 95 ns TJ = 25°C, IF = 25A Qrr Reverse Recovery Charge ––– 170 260 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics 49 160 A Starting T J = 25°C, L = 0.48mH RG = 25Ω, IAS = 25A. (See Figure 12) Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Notes: I SD ≤ 25A, di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is a typical value at device destruction and represents operation outside rated limits. This is a calculated value limited to TJ = 175°C . Parameter Min. Typ. Max. Units Conditions V(BR)DSS GS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.058 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 17.5 m Ω VGS = 10V, ID = 25A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 17 ––– ––– S VDS = 25V, ID = 25A ––– ––– 25 µA VDS = 54V, VGS = 0V ––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V Qg Total Gate Charge ––– ––– 63 ID = 25A Qgs Gate-to-Source Charge ––– ––– 14 nC VDS = 44V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 23 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 12 ––– VDD = 28V tr Rise Time ––– 60 ––– ID = 25A td(off) Turn-Off Delay Time ––– 44 ––– RG = 12Ω tf Fall Time ––– 45 ––– VGS = 10V, See Fig. 10 Between lead, ––– ––– 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 1470 ––– VGS = 0V Coss Output Capacitance ––– 360 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 88 ––– pF ƒ = 1.0MHz, See Fig. 5 EAS Single Pulse Avalanche Energy ––– 530
150 mJ IAS = 25A, L = 0.47mH nH Electrical Characteristics @ TJ = 25°C (unless otherwise specified) LD Internal Drain Inductance LS Internal Source Inductance ––– ––– S D G IGSS ns 4.5 7.5 IDSS Drain-to-Source Leakage Current HEXFET® Power MOSFET E 44N / E 44NB Drain-to-Source Breakdown Voltage 55/54 ––– ––– V V |
Similar Part No. - E44NB |
|
Similar Description - E44NB |
|
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.NET |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
