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HCF40208 Datasheet(PDF) 6 Page - STMicroelectronics |
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HCF40208 Datasheet(HTML) 6 Page - STMicroelectronics |
6 / 13 page STATIC ELECTRICAL CHARACTERISTICS (continued) Test Conditions Value V I V O |I O |V DD T Lo w* 25 °CT Hi g h * Symbol Parameter (V) (V) ( µA) (V) Min. Max. Min. Typ. Max. Min. Max. Unit I OL Output Sink Current HCC Types 0/ 5 0.4 5 0.64 0.51 1 0.36 mA 0/10 0.5 10 1.6 1.3 2.6 0.9 0/15 1.5 15 4.2 3.4 6.8 2.4 HCF Types 0/ 5 0.4 5 0.52 0.44 1 0.36 0/10 0.5 10 1.3 1.1 2.6 0.9 0/15 1.5 15 3.6 3.0 6.8 2.4 I IH,IIL Input Leakage Current HCC Types 0/18 Any Input 18 ± 0.1 ±10–5 ± 0.1 ± 1 µA HCF Types 0/15 15 ± 0.3 ±10–5 ± 0.3 ± 1 IOH,IOL** 3-State Output Leakage Current HCC Types 0/18 0/18 18 ± 0.4 ±10–4 ± 0.4 ± 12 µA HCF Types 0/15 0/15 15 ± 1.0 ±10–4 ± 1.0 ± 7.5 CI Input Capacitance Any Input 5 7.5 pF *TLow =– 55 °Cfor HCC device : – 40°C for HCF device. *THigh = + 125 °Cfor HCC device : + 85°Cfor HCF device. The Noise Margin for both ”1” and ”0” level is : 1V min. with VDD = 5V, 2V min. with VDD = 10V, 2.5V min. with VDD = 15V. ** Forced output disable. DYNAMIC ELECTRICAL CHARACTERISTICS (T amb =25°C, CL = 50pF, RL = 200kΩ, typical temperature coefficient for all VDD values is 0.3%/°C, all input rise and fall time = 20ns) Test Conditions Val ue Symbol Parameter V DD (V) Min. Typ. Max. Unit t PHL , t PLH Propagation Delay Time : Clock to Write Enable to Q 5360 720 ns 10 140 280 15 100 200 Read or Write Address to Q 5 300 600 ns 10 120 240 15 85 170 t PZH, t PHZ 3-state Disable Delay Time 5 100 200 ns 10 50 100 15 40 80 t PZL, t PL Z 3-State Disable Delay time 5 130 260 ns 10 60 120 15 50 100 t THL, t TLH Output Transition Time 5 100 200 ns 10 50 100 15 40 80 t se tu p Setup Time Data to Clock t s(D) 50 – 95 ns 10 0 – 35 15 0 – 20 Write Enable to Clock t s(WE) 5 250 125 ns 10 100 50 15 70 35 Write Address to Clock ts(WA ) 5 250 125 ns 10 100 50 15 70 35 HCC/HCF40208B 6/13 |
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