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CDQ0303-QS Datasheet(PDF) 1 Page - Mimix Broadband |
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CDQ0303-QS Datasheet(HTML) 1 Page - Mimix Broadband |
1 / 14 page 500-6000 MHz Dual, Ultra Low Noise, High IP3 Amplifier Page 1 of 14 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. October 2007 - Rev 22-Oct-07 CDQ0303-QS Features Applications Typical Specifications (50 System) Description Matched Pair of Transistors for Optimum Balanced Amplifier Design AlGaAs/InGaAs/AlGaAs Pseudomorphic High Electron Mobility Transistor (pHEMT) High Gain: 25 dB @ 900 MHz 21 dB @ 1900 MHz Low Noise Figure: 0.6 dB @ 900 MHz 0.7 dB @ 1900 MHz 17 dBm P1dB at 2 GHz 33 dBm OIP3 at 2 GHz 600µm Gate Width: 50 Output Impedance Excellent Uniformity Ultra Compact Surface-Mount QFN Package 10 Year MTBF Lifetime RoHS-Compliant Construction Low Noise Amplifiers and Oscillators Operating over the RF and Microwave Frequency Ranges Cellular/PCS/GSM/W-CDMA Mobile Handsets, Base Station Receivers and Tower-Mount Amplifiers WiMAX WLAN, LEO, GEO, WLL/RLL, GPS and MMDS Applications General Purpose Discrete pHEMT for Other Ultra Low-Noise and Medium Power Applications Parameter 900 MHz 1900 MHz 2400 MHz Units S21 Gain 23.5 20.0 16.0 dB S11 Input Return Loss -3.0 -4.0 -3.0 dB S22 Output Return Loss -3.5 -4.5 -7.0 dB Output IP3 31.8 32.5 32.7 dBm Output P1 dB 16.5 16.0 16.0 dBm Noise FIgure 0.55 0.72 0.89 dB Operating Current Range 50 50 50 mA Supply Voltage 3.0 3.0 3.0 V Note:Typical specifications represents performance for each side of the matched pair of transistors in the recommended application circuit board (see page 15). It is anticipated that the pair will be used in a bal- anced circuit configuration, hence the matches are optimized for best noise figure and OIP3 performance. The CDQ0303-QS is a dual, ultra low-noise amplifi- er combining high gain, state-of-the-art noise figure and high IP3. Utilizing Mimix's distinctive in-house GaAs fabrica- tion advantage and matched pair technology, co-located matched transistor die are assembled in the 4mm x 4mm QFN package. The low-cost, surface-mount, 16 terminal, plastic package is also lead-free. Packaging a matched pair of ultra low-noise devices in a single package makes the CDQ0303-QS an ideal product for balanced amplifier implementation. It is intended for many applications operating in the 900 MHz to 2400 MHz frequency range. It can also be used in a dual-band configu- ration where a single transistor is used for each band. Mimix's high performance packaged pHEMTs are ideal for use in all applications where low-noise figure, high gain, medium power and good intercept is required. The CDQ0303-QS is the perfect solution for the first or second stage of a base station LNA due to the excellent combination of low-noise figure and linearity. It is also well suited as a medium power driver stage in pole-top amplifiers and other transmit functions, particularly as the low thermal resistance allows extended power dissipation when voltage and current are adjusted for increased power and linearity. |
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Similar Description - CDQ0303-QS_07 |
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