0.1-10.0 GHz Low Noise, Medium Power

pHEMT in a Surface Mount Plastic Package

Page 4 of 17

CFS0303-SB

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Characteristic Data and Specifications are subject to change without notice.

©2007 Mimix Broadband, Inc.

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

September 2007 - Rev 28-Sep-07

Typical Performance

Notes:

1. P1dB and OIP3 measurements are performed with passive biasing. Idsq is set with zero RF drive applied. As P1dB is approached, the drain current may

increase or decrease depending on frequency and DC bias point. At lower values of Idsq the device is running in a Class AB mode and current tends to rise

as P1dB is approached. As an example, at a Vds = 3.0V and Idsq = 10 mA, Id increases to 30 mA as P1dB of 16.5 is approached. This rise in current is no

longer present as Idsq approaches 60 mA.

2. Measurements made on a fixed tuned test system set for optimum noise match. Circuit losses have been de-embedded for the actual measurements.

0

5

10

15

20

25

30

35

0

10

203040

5060

4V

3V

2V

OIP3

0

5

10

15

20

25

30

35

0

102030

405060

4V

3V

2V

OIP3

1,2

1,2

?

??

2

NF and Ga vs. Bias at 2GHz

0

0.2

0.4

0.6

0.8

1.0

1.2

1.6

1.4

6

8

10

12

14

16

18

22

20

IDSQ(mA)

3V

2V

4V

Ga

NFmin

0

10

20

30

40

50

60

?

2

NF and Ga vs. Bias at 1GHz

2V

3V

4V

Ga

NFmin

0

0.2

0.4

0.6

0.8

1.0

1.2

1.6

1.4

6

8

10

12

14

16

18

22

20

IDSQ(mA)

0

10

20

30

40

50

60