Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Characteristic Data and Specifications are subject to change without notice.

©2007 Mimix Broadband, Inc.

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

August 2007 - Rev 12-Aug-07

Mimix Broadband’s 10.0-18.0 GHz GaAs packaged receiver has a

noise figure of 2.7 dB and 20.0 dB image rejection across the band.

This device is a two stage balanced LNA followed by an image reject

sub-harmonic anti-parallel diode mixer and includes an integrated

LO buffer amplifer. The image reject mixer eliminates the need for a

bandpass filter after the LNA to remove thermal noise at the image

frequency. I and Q mixer outputs are provided and an external 90

degree hybrid is required to select the desired sideband. This device

uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model

technology, and is based upon electron beam lithography to ensure

high repeatability and uniformity. The device comes in a 7x7 mm

QFN Surface Mount Laminate Package offering excellent RF and

thermal properties and is RoHS compliant. This device is well suited

for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT

applications.

10.0-18.0 GHz GaAs Receiver

QFN, 7x7 mm

Page 1 of 6

Integrated LNA, LO Buffer, Image Reject Mixer

7x7 mm, QFN

+2.0 dBm LO Drive Level

2.7 dB Noise Figure

20.0 dB Image Rejection

100% RF, DC and Noise Figure Testing

Features

General Description

Absolute Maximum Ratings

Supply Voltage (Vd)

Supply Current (Id1,Id2)

Gate Bias Voltage (Vg)

Input Power (RF Pin)

Storage Temperature (Tstg)

Operating Temperature (Ta)

Channel Temperature (Tch)

+5.0 VDC

200, 250 mA

+0.3 VDC

+17 dBm

-55 to MTTF Table

MTTF Table

(3) Channel temperature affects a device's MTTF. It is

recommended to keep channel temperature as low as

possible for maximum life.

3

3

Units

GHz

GHz

GHz

dB

dB

dBm

dBc

dB

dB

dBm

VDC

VDC

VDC

mA

mA

Min.

10.0

8.0

DC

-

-

-

-

-

-

-

-

-

-1.2

-

-

Typ.

-

-

-

15.0

15.0

+2.0

20.0

2.7

40.0

+4.0

+4.0

+4.0

-0.3

80

100

Max.

18.0

20.0

4.0

-

-

-

-

-

-

-

+4.5

+4.5

+0.1

120

150

Parameter

Frequency Range (RF) Upper Side Band

Frequency Range (LO)

Frequency Range (IF)

Input Return Loss RF (S11)

Isolation LO/RF @ LOx1/LOx2

Drain Bias Voltage (Vd1)

Drain Bias Voltage (Vd2)

Gate Bias Voltage (Vg1,2)

Supply Current (Id1) (Vd1=4.0V, Vg=-0.3V Typical)

Supply Current (Id2) (Vd2=4.0V,Vg=-0.3V Typical)

(1) Measured using constant current.

(2) Measured using LO Input drive level of +2.0 dBm.

R1007-QD