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IRF630FP Datasheet(PDF) 3 Page - STMicroelectronics |
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IRF630FP Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 9 page ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l Parameter Test Con ditions Min. Typ. Max. Unit td(on) tr Turn-on Time Rise Time VDD =100 V ID = 4.5 A RG =4.7 Ω VGS =10 V (see t est circuit, f igure 3) 10 15 14 20 ns ns Qg Q gs Qgd Tot al G ate Charge Gat e-Source Charge Gat e-Drain Charge VDD = 160 V ID =9 A VGS =10 V 31 7.5 9 45 nC nC nC SWITCHING OFF Symbo l Parameter Test Con ditions Min. Typ. Max. Unit tr(Voff) tf tc Off -volt age Rise T ime Fall T ime Cross-over Time VDD =160 V ID =9 A RG =4.7 Ω VGS =10 V (see t est circuit, f igure 5) 12 12 25 17 17 35 ns ns ns SOURCE DRAIN DIODE Symbo l Parameter Test Con ditions Min. Typ. Max. Unit ISD ISDM ( •) Source-drain Current Source-drain Current (pulsed) 9 36 A A VSD ( ∗)Forward On Voltage ISD =9 A VGS =0 1. 5 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD =9 A di/dt = 100 A/ µs VDD =50 V Tj = 150 oC (see t est circuit, f igure 5) 170 0.95 11 ns µC A ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( •) Pulse width limited by safe operating area Safe Operating Area for TO-220 Safe Operating Area for TO-220FP IRF630/FP 3/9 |
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Similar Description - IRF630FP |
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