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IRF630FP Datasheet(PDF) 3 Page - STMicroelectronics

Part # IRF630FP
Description  N - CHANNEL 200V - 0.35ihm - 9A - TO-220/FP MESH OVERLAY] MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

IRF630FP Datasheet(HTML) 3 Page - STMicroelectronics

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Time
Rise Time
VDD =100 V
ID = 4.5 A
RG =4.7
Ω
VGS =10 V
(see t est circuit, f igure 3)
10
15
14
20
ns
ns
Qg
Q gs
Qgd
Tot al G ate Charge
Gat e-Source Charge
Gat e-Drain Charge
VDD = 160 V
ID =9 A
VGS =10 V
31
7.5
9
45
nC
nC
nC
SWITCHING OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Off -volt age Rise T ime
Fall T ime
Cross-over Time
VDD =160 V
ID =9 A
RG =4.7
Ω VGS =10 V
(see t est circuit, f igure 5)
12
12
25
17
17
35
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
ISD
ISDM (
•)
Source-drain Current
Source-drain Current
(pulsed)
9
36
A
A
VSD (
∗)Forward On Voltage
ISD =9 A
VGS =0
1. 5
V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD =9 A
di/dt = 100 A/
µs
VDD =50 V
Tj = 150
oC
(see t est circuit, f igure 5)
170
0.95
11
ns
µC
A
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
•) Pulse width limited by safe operating area
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
IRF630/FP
3/9


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