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TM400UZ-M Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor |
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TM400UZ-M Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor |
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2 / 4 page  Feb.1999 24 1200 1350 960 1200 1350 960 ABSOLUTE MAXIMUM RATINGS Unit V V V V V V MITSUBISHI THYRISTOR MODULES TM400DZ/CZ/PZ/UZ-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE M 400 480 320 400 480 320 Symbol VRRM VRSM VR (DC) VDRM VDSM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage Non-repetitive peak off-state voltage DC off-state voltage Unit A A A A2s A/ µs W W V V A °C °C V N·m kg·cm N·m kg·cm g Conditions Single-phase, half-wave 180 ° conduction, TC=66°C One half cycle at 60Hz, peak value Value for one cycle of surge current VD=1/2VDRM, IG=1.0A, Tj=125 °C Charged part to case Main terminal screw M8 Mounting screw M6 Typical value Ratings 620 400 8000 2.7 × 105 200 10 3.0 10 5.0 4.0 –40~+125 –40~+125 2500 8.83~10.8 90~110 1.96~3.92 20~40 1100 Symbol IT (RMS) IT (AV) ITSM I2t di/dt PGM PG (AV) VFGM VRGM IFGM Tj Tstg Viso — — Parameter RMS on-state current Average on-state current Surge (non-repetitive) on-state current I2t for fusing Critical rate of rise of on-state current Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Isolation voltage Mounting torque Weight Voltage class ELECTRICAL CHARACTERISTICS Unit mA mA V V/ µs V V mA °C/W °C/W M Ω Limits Symbol IRRM IDRM VTM dv/dt VGT VGD IGT Rth (j-c) Rth (c-f) — Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Critical rate of rise of off-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Thermal resistance Contact thermal resistance Insulation resistance Test conditions Tj=125 °C, VRRM applied Tj=125 °C, VDRM applied Tj=125 °C, ITM=1200A, instantaneous meas. Tj=125 °C, VD=2/3VDRM Tj=25 °C, VD=6V, RL=2Ω Tj=125 °C, VD=1/2VDRM Tj=25 °C, VD=6V, RL=2Ω Junction to case, per 1/2 module Case to fin, conductive grease applied, per 1/2 module Measured with a 500V megohmmeter between main terminal and case Min. — — — 500 — 0.25 15 — — 10 Typ. — — — — — — — — — — Max. 60 60 1.4 — 3.0 — 100 0.1 0.05 — H 800 960 640 800 960 640 2H 1600 1700 1280 1600 1700 1280 |
Similar Part No. - TM400UZ-M |
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Similar Description - TM400UZ-M |
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