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XP1013-BD Datasheet(PDF) 1 Page - Mimix Broadband |
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XP1013-BD Datasheet(HTML) 1 Page - Mimix Broadband |
1 / 7 page Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. August 2007 - Rev 08-Aug-07 Mimix Broadband’s three stage 17.0-26.0 GHz GaAs MMIC power amplifier has a small signal gain of 20.0 dB with a +24.0 dBm saturated output power. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications. 17.0-26.0 GHz GaAs MMIC Power Amplifier Excellent Saturated Output Stage Competitive RF/DC Bias Pin for Pin Replacement 20.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Features General Description Electrical Characteristics (AmbientTemperatureT = 25 oC) Parameter Frequency Range (f ) Input Return Loss (S11) Output Return Loss (S22) Small Signal Gain (S21) Gain Flatness ( S21) Reverse Isolation (S12) Saturated Output Power (Psat) Drain Bias Voltage (Vd1,2,3) Gate Bias Voltage (Vg1,2,3) Supply Current (Id) (Vd=6.0V, Vg=-0.7V Typical) Units GHz dB dB dB dB dB dBm VDC VDC mA Min. 17.0 - - - - - - - -1.0 - Typ. - 10.0 10.0 20.0 +/-2.0 50.0 +24.0 +6.0 -0.7 320 Max. 26.0 - - - - - - +8.0 0.0 480 Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +9.0 VDC 650 mA +0.3 VDC +5.0 dBm -65 to +165 OC -55 to MTTF Table MTTF Table Chip Device Layout Page 1 of 7 1 (1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life. 1 P1013-BD XP1013-BD |
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Similar Description - XP1013-BD |
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