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2SC3930W Datasheet(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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2SC3930W Datasheet(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
1 / 4 page BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor 2SC3930W Document number: BL/SSSTF036 www.galaxycn.com Rev.A 1 FEATURES High transition frequency fT. Optimum for RF amplification of FM/AM radios. For high-frequency amplification complementary to 2SA1532. APPLICATIONS Audio frequency general purpose amplifier. SOT-323 ORDERING INFORMATION Type No. Marking Package Code 2SC3930W VB/VC SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 30 mA PC Collector Dissipation 150 mW Tj,Tstg Junction and Storage Temperature -55~150 ℃ Pb Lead-free |
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