 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
FPD3000SOT89E-BC Datasheet(PDF) 3 Page - Filtronic Compound Semiconductors |
|
||||||||||||||||||||||||||||||
FPD3000SOT89E-BC Datasheet(HTML) 3 Page - Filtronic Compound Semiconductors |
|
|
3 / 7 page  Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Website: www.filtronic.com 3 FPD3000SOT89 Datasheet v3.0 TYPICAL TUNED RF PERFORMANCE: Drain Efficiency and PAE 0% 5% 10% 15% 20% 25% 30% 35% 40% 45% 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 Input Power (dBm) 0% 5% 10% 15% 20% 25% 30% 35% 40% 45% PAE Eff. Power Transfer Characteristic 23.0 24.0 25.0 26.0 27.0 28.0 29.0 30.0 31.0 32.0 11.0 13.0 15.0 17.0 19.0 21.0 23.0 Input Power (dBm) -0.75 -0.25 0.25 0.75 1.25 1.75 2.25 2.75 3.25 Pout (dBm) Comp Point NOTE: Typical power and efficiency is shown above. The devices were biased nominally at VDS = 5V, IDS = 50% of IDSS, at a test frequency of 1.85 GHz. The test devices were tuned (input and output tuning) for maximum output power at 1dB gain compression. Typical Intermodulation performance VDS = 5V, IDS = 50% IDSS at f = 1.85GHz 11 13 15 17 19 21 0.7 1.7 2.8 3.8 4.7 5.7 6.8 7.8 8.8 9.8 Inout Power (dBm) -60.00 -58.00 -56.00 -54.00 -52.00 -50.00 -48.00 -46.00 -44.00 -42.00 -40.00 Pout (dBm) 3rds (dBc) Note: The recommended method for measuring IDSS, or any particular IDS, is to set the Drain-Source voltage (VDS) at 1.3V. This measurement point avoids the onset of spurious self-oscillation which would normally distort the current measurement (this effect has been filtered from the I-V curves presented above). Setting the VDS > 1.3V will generally cause errors in the current measurements, even in stabilized circuits. Note: pHEMT devices have enhanced intermodulation performance. This yields OIP3 values of about P1dB + 14 dB. This IMD enhancement is affected by the quiescent bias and the matching applied to the device. TYPICAL I-V CHARACTERISTICS: 0.51.5 2.53.5 4.55.5 6.57.5 8 equency (GHz) FPD3000SOT89 5V / 50%IDSS Fr 0 5 10 15 20 25 30 35 MSG S21 DC IV Curves FPD3000SOT89 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Drain-Source Voltage (V) VG=-1.50V VG=-1.25V VG=-1.00V VG=-0.75V VG=-0.50V VG=-0.25V VG=0V |
Similar Part No. - FPD3000SOT89E-BC |
|
Similar Description - FPD3000SOT89E-BC |
|
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.NET |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
