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ERB12-04 Datasheet(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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ERB12-04 Datasheet(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
1 / 2 page GALAXY ELECTRICAL FEATURES Low cost Diffused junction Low leakage Low forward voltage drop High current capability and similar solvents MECHANICAL DATA Case:JEDEC DO--41,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.012ounces,0.34 grams Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. ERA12 -04 ERB12 -06 ERB12 -10 UNITS Maximum recurrent peak reverse voltage VRRM 400 600 1000 V Maximum RMS voltage VRMS 280 420 700 V Maximum DC blocking voltage VDC 400 600 1000 V Maximum average forw ard rectified current 9.5mm lead length, @T A=75 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @T J=125 Maximum instantaneous forw ard voltage @ 1.0 A VF V Maximum reverse current @T A=25 at rated DC blocking voltage @T A=100 Typical junction capacitance (Note1) CJ pF Typical thermal resistance (Note2) RθJA /W Operating junction temperature range TJ Storage temperature range TSTG ERB12-01---ERB12-10 DO - 41 100 70 100 ERB12 -01 Easily cleaned with Freon,Alcohol,Isopropanol 200 140 VOLTAGE RANGE: 50 --- 1000 V CURRENT: 1.0 A A IFSM 2. Thermal resistance f rom junction to ambient. A NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. - 55---- + 150 - 55 ---- +150 15 50 IR 60.0 5.0 50.0 1.1 1.0 A PLASTIC SILICON RECTIFIER IF(AV) The plastic material carries U/L recognition 94V-0 200 ERB12 -02 www.galaxycn.com BL BLGALAXY ELECTRICAL Document Number 0260021 1. |
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