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L482D1 Datasheet(PDF) 2 Page - STMicroelectronics |
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L482D1 Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 11 page BLOCK DIAGRAM (*) Thermal resistance junction-aluminia with the device soldered on the middle of an aluminia supporting substrate measuring 15 x 20mm ; 0.65mm thickness with infinite heatsink. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VR Reverse Battery Voltage – 14 V VD Dump Voltage 100 V Ptot Power Dissipation at Tamb =90 °C SO16 DIP 1.2 0.65 W W Tj,Tstg Junction and Storage Temperature Range – 55 to 150 °C THERMAL DATA Symbol Parameter Value Unit Rth j-amb Thermal Resistance Junction-ambient (DIP16) Max 90 °C/W Rth j-al Thermal Resistance Junction-alumina (SO16) Max 50 °C/W L482 2/11 |
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