HWF1686RA

L-Band GaAs Power FET

June 2005

V3

Hexawave Inc.

2 Prosperity Road II, Science-Based Industrial Park, Hsinchu, Taiwan.

TEL 886-3-578-5100 FAX 886-3-577-0512

http://www.hw.com.tw

All specifications are subject to change without notice.

Features

Description

The HWF1686RA is a medium power GaAs

MESFET designed for various RF and Microwave

applications.

It is presently offered in a low cost,

surface-mountable ceramic package.

Absolute Maximum Ratings

[1]

Drain to Source Voltage

+15V

Gate to Source Voltage

-5V

Drain Current

Gate Current

2 mA

Channel Temperature

175°C

Storage Temperature

-65 to +175°C

[2]

Power Dissipation

3.5 W

[1]

Hexawave recommends that the quiescent

exceed 10 Volts.

[2]Mounted on an infinite heat sink.

Outline Dimensions

Electrical Specification at 25°°°°C

Symbol

Parameters

Conditions

Units

Min.

Typ.

Max.

Saturated Drain Current

mA

300

400

600

Pinch-off Voltage

V

-3.5

-2.0

-1.5

Transconductance

mS

-

200

-

Thermal Resistance

Channel to Case

°C/W

-

30

40

Output Power @1dB Gain

dBm

29.0

30.0

-

Linear Power Gain

dB

15

16

-

PAE

%

-

45

-

Third-order Intercept Point

[3]

f=2.4 GHz

dBm

-

45

-

RA Package (Ceramic)