HWL23NPB

L-Band GaAS Power FET

Autumn 2002 V1

Hexawave Inc.

2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C..

TEL 886-3-578-5100 FAX 886-3-577-0512

http://www.hw.com.tw

Output Power & Efficiency & Gain vs Frequency

@ Vds=3V, Ids=55mA

5

10

15

20

25

0.7

0.8

0.9

1.0

1.1

f (GHz)

Po (dBm)

0

10

20

30

40

50

60

Gain

PAE (%)

Po

Gain

PAE

Output Power & Efficiency & Gain vs Frequency

@ Vds=5V, Ids=55mA

5

10

15

20

25

1.6

1.7

1.8

1.9

2.0

2.1

f (GHz)

Po (dBm)

0

10

20

30

40

50

60

Gain

PAE (%)

Po

Gain

PAE