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1N60P Datasheet(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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1N60P Datasheet(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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1 / 2 page  FEATURES Metal s illicon junction m ajority carrier conduction High current capability,Low forward voltage drop Extrem ely low revers e current IR Ultra s peed s witching characteris tics MECHANICAL DATA Cas e:JEDEC DO--35,glas s cas e Weight: Approx. 0.13 gram VRRM V Forw ard continuous current IF mA IFSM mA TSTG/TJ TL Min. Typ. Max. 1N60P Sm all tem perature coefficient of forward ffffff characteris tics SMALL SIGNAL SCHOTTKY DIODES VOLTAGE RANGE: 45 V CURRENT: 0.1 A DO - 35(GLASS) GALAXY ELECTRICAL pF % ns /W 60.0 RθJA Reverse recovery time Thermal resistance junction to ambient ELECTRICAL CHARACTERISTICS Parameters UNITS A 0.5 1.0 1.0 VR=15V Detection ef f iciency (See FIG. 4) trr Reverse current Junction capacitance IR CJ For us e in RECORDER. TV. RADIO. TELEPHONE Satis factory wave detection efficiency s m all current rectifier Symbols Parameters ABSOLUTE RATINGS(LIMITING VALUES) UNITS Value Polarity: Color band denotes cathode end as detectors ,s uper high s peed s witching circuits , V Forward voltage I F=1m A VF 0.24 45 Test Conditions Value Repetitive peak reverse voltage Peak f orw ard surge current (t=1s) T A =25 Storage and junction temperature range I F=IR =1 m A Irr =1 m A R C=100 I F=200m A 1N60P 500 XX- 55 ---- + 125 230 Maximum lead temperature f or soldering during 10s at 4mm f rom case Symbols 50 0.65 0.5 VR=10V f=1MHz Vl=3V f=30MHz CL=10pF RL=3.8K 1.0 6.0 400 www.galaxycn.com BL Document Number 0265007 1. BLGALAXY ELECTRICAL |
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Similar Description - 1N60P |
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