FEATURES

Metal-Semiconductor junction with guard ring

Epitaxial construction

Low forward voltage drop,low switching losses

High surge capability

MECHANICAL DATA

Case:JEDEC DO--27,molded plastic

Terminals: Axial lead ,solderable per

MIL- STD-202,

method 208

Polarity: Color band denotes cathode

Weight: 0.041 ounces,1.15 grams

Mounting position: Any

Ratings at 25

ambient temperature unless otherwise specified.

Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.

UNITS

Maximum recurrent peak reverse voltage

V

Maximum RMS voltage

V

Maximum DC blocking voltage

V

Maximum average forw ard rectified current

9.5mm lead length,

@T

Peak forw ard surge current

8.3ms single half-sine-w ave

superimposed on rated load

@T

Maximum instantaneous forw ard voltage @ 3.0A

(Note 1)

@ 9.4A

Maximum reverse current

@T

at rated DC blocking voltage @T

Typical junction capacitance

(Note2)

pF

Typical thermal resistance

(Note3)

／Ｗ

Operating junction temperature range

Storage temperature range

GALAXY ELECTRICAL

1N5820--- 1N5822

A

For use in low voltage,high frequency inverters free

SCHOTTKY BARRIER RECTIFIER

VOLTAGE RANGE: 20 --- 40 V

CURRENT: 3.0 A

DO - 27

The plastic material carries U/L recognition 94V-0

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

1N5820

3.Thermal resistance junction to ambient

mA

NOTE: 1. Pulse test : 300 s pulse width,1% duty cy cle.

2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.

A

20

- 55 ---- + 125

- 55 ---- + 150

80.0

250

3.0

20.0

2.0

40

0.525

0.95

0.50

V

0.90

0.475

0.85

1N5821

1N5822

40

28

30

21

30

20

14

20

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Document Number 0266002

1.