FEATURES

Metal-Semiconductor junction with guard ring

Epitaxial construction

Low forward voltage drop,low switching losses

High surge capability

MECHANICAL DATA

Case:JEDEC DO--15,molded plastic

Terminals: Axial lead ,solderable per

MIL- STD-750,Method 2026

Polarity: Color band denotes cathode

Weight: 0.014ounces,0.39 grams

Mounting position: Any

Ratings at 25

ambient temperature unless otherwise specified.

Single phase,half wave,50 Hz,resistive or inductive load. For capacitive load,derate by 20%.

SR230

SR240

SR250

SR260

SR280

SR2A0 UNITS

Maximum recurrent peak reverse voltage

30

40

50

60

80

100

V

Maximum RMS voltage

21

28

35

42

56

70

V

Maximum DC blocking voltage

30

40

50

60

80

100

V

Maximum average forw ard rectified current

9.5mm lead length,

@T

Peak forw ard surge current

8.3ms single half-sine-w ave

superimposed on rated load

@T

Maximum reverse current

@T

at rated DC blocking voltage @T

Typical junction capacitance

(Note2)

pF

Typical thermal resistance

(Note3)

／Ｗ

Operating junction temperature range

Storage temperature range

170

Maximum instantaneous forw ard voltage

@ 2.0A (Note 1)

10.0

1.0

V

0.55

0.7

0.85

50.0

20

SR220

14

20

2.0

3.Thermal resistance junction to ambient

mA

NOTE: 1. Pulse test:300us pulse width,1% duty cy cle.

2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.

A

35

- 55 ---- + 125

- 55 ---- + 150

SR220 --- SR2A0

A

For use in low voltage,high frequency inverters free

SCHOTTKY BARRIER RECTIFIER

VOLTAGE RANGE: 20 --- 100 V

CURRENT: 2.0 A

DO - 15

The plastic material carries U/L recognition 94V-0

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

GALAXY ELECTRICAL

www.galaxycn.com

BL

Document Number 0266009

1

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