Specifications subject to change without notice

Filtronic Compound Semiconductors Ltd

Tel: +44 (0) 1325 301111

Fax: +44 (0) 1325 306177

Email: sales@filcs.com

1

Datasheet v3.0

FPD750SOT343

•

0.5 dB N.F.min.

•

20 dBm Output Power (P1dB)

•

16.5 dB Small-Signal Gain (SSG)

•

37 dBm Output IP3

•

RoHS compliant (Directive 2002/95/EC)

The FPD750SOT343 is a packaged depletion

mode pseudomorphic High Electron Mobility

Transistor (pHEMT). It utilizes a 0.25 µm x 750

µm Schottky barrier Gate. The Filtronic

0.25µm process ensures class-leading noise

performance.

The use of a small footprint

plastic package allows for cost effective

system implementation.

•

802.11a,b,g and WiMax LNAs

•

PCS/Cellular High Linearity LNAs

•

Other types of wireless infrastructure systems.

Power at 1dB Gain Compression

OP1dB

VDS = 3.3 V; IDS = 40mA

20

19

20

20.5

dBm

Small Signal Gain

SSG

VDS = 3.3 V; IDS = 40mA

22

16.5

14

11

dB

Power-Added Efficiency

PAE

VDS = 3.3 V; IDS = 40mA

POUT = P1dB

50

45

45

50

%

Maximum Stable Gain (|S21/S12|)

MSG

VDS = 3.3 V; IDS = 40mA

24

20

18

16

dB

Noise Figure

N.F.

VDS = 3.3 V; IDS = 40mA

0.5

0.6

0.7

0.8

dB

Output Third-Order Intercept Point

POUT = 9 dBm per Tone

OIP3

VDS = 3.3V; IDS = 40mA

VDS = 3.3V; IDS = 80mA

32

35

31

37

31

35

32

38

dBm

Frequency

f

2.0

GHz

Power at 1dB Gain Compression

P1dB

VDS = 3.3 V; IDS = 40mA

17

dBm

Small Signal Gain

SSG

VDS = 3.3 V; IDS = 40mA

16

dB

Saturated Drain-Source Current

IDSS

VDS = 1.3 V; VGS = 0 V

185

230

280

mA

Transconductance

GM

VDS = 1.3 V; VGS = 0 V

200

mS

Pinch-Off Voltage

|VP|

VDS = 1.3 V; IDS = 0.75 mA

0.7

1.0

1.3

V

Gate-Source Breakdown Voltage

|VBDGS|

IGS = 0.75 mA

13

16

V

Gate-Drain Breakdown Voltage

|VBDGD|

IGD = 0.75 mA

13

18

V

Thermal Resistivity (see Notes)

θJC

VDS > 3V

143

°C/W

Note: 1. Based on measured data taken on applications circuits. 2. All devices are 100% RF and DC tested at