 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
EB750SOT89E-BG Datasheet(PDF) 1 Page - Filtronic Compound Semiconductors |
|
||||||||||||||||||||||||||||||
EB750SOT89E-BG Datasheet(HTML) 1 Page - Filtronic Compound Semiconductors |
|
|
1 / 12 page  LOW NOISE HIGH LINEARITY PACKAGED PHEMT Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Website: www.filtronic.com 1 Datasheet 3.0 FPD750SOT89 FEATURES (1.85GHZ): • 25 dBm Output Power (P1dB) • 18 dB Small-Signal Gain (SSG) • 0.6 dB Noise Figure • 39 dBm Output IP3 • 55% Power-Added Efficiency • FPD750SOT89E: RoHS compliant (Directive 2002/95/EC) GENERAL DESCRIPTION: The FPD750SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 750 µm Schottky barrier Gate, defined by high-resolution stepper- based photolithography. The double recessed gate structure minimizes parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a range of bias conditions and i/p power levels. PACKAGE: RoHS TYPICAL APPLICATIONS: • Drivers or output stages in PCS/Cellular base station transmitter amplifiers • High intercept-point LNAs • WLL and WLAN systems, and other types of wireless infrastructure systems. ELECTRICAL SPECIFICATIONS: PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Power at 1dB Gain Compression P1dB VDS = 5 V; IDS = 50% IDSS 23 25 dBm Small-Signal Gain SSG VDS = 5 V; IDS = 50% IDSS 16.5 18 dB Power-Added Efficiency PAE VDS = 5 V; IDS = 50% IDSS; POUT = P1dB 50 % Noise Figure NF VDS = 5 V; IDS = 50% IDSS VDS = 5 V; IDS = 25% IDSS 0.8 0.6 1.0 dB Output Third-Order Intercept Point (from 15 to 5 dB below P1dB) IP3 VDS = 5V; IDS = 50% IDSS Matched for optimal power Matched for best IP3 36 38 39 dBm Saturated Drain-Source Current IDSS VDS = 1.3 V; VGS = 0 V 185 230 280 mA Maximum Drain-Source Current IMAX VDS = 1.3 V; VGS ≅ +1 V 375 mA Transconductance GM VDS = 1.3 V; VGS = 0 V 200 mS Gate-Source Leakage Current IGSO VGS = -5 V 1 15 µA Pinch-Off Voltage |VP| VDS = 1.3 V; IDS = 0.75 mA 0.7 1.0 1.3 V Gate-Source Breakdown Voltage |VBDGS| IGS = 0.75 mA 12 16 V Gate-Drain Breakdown Voltage |VBDGD| IGD = 0.75 mA 12 16 V Thermal Resistance R θJC 83 °C/W Note: TAMBIENT = 22°C; RF specification measured at f = 1850 MHz using CW signal (except as noted) |
Similar Part No. - EB750SOT89E-BG |
|
Similar Description - EB750SOT89E-BG |
|
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.NET |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
