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FMA3051 Datasheet(PDF) 1 Page - Filtronic Compound Semiconductors |
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FMA3051 Datasheet(HTML) 1 Page - Filtronic Compound Semiconductors |
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1 / 6 page  12.5-15.5 GHZ MMIC HIGH POWER AMPLIFIER Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com 1 FMA3051 Pilot Datasheet v2.1 FEATURES • 35 dB Gain • 30 dBm P1dB Output Power at 6 V, 1.2 A • 40 dBm OIP3 • pHEMT Technology • On-chip output power detector • 5 x 3 sq. mm die GENERAL DESCRIPTION The FMA3051 is a high performance 12.5-15.5 GHz Gallium Arsenide monolithic amplifier. It is suitable for use in point-to- multipoint communications, sat-com and electronic warfare applications. The die is fabricated using the Filtronic 0.25 µm process. The balanced design offers high output power with low return losses. Power detection is achieved with an on-chip coupled detector associated with diode reference voltage. The circuit is DC blocked at both the RF input and the RF output. FUNCTIONAL SCHEMATIC D1 D2 D3 D4 G2 G3 G4 RF IN RF OUT DET D1 D2 D3 D4 G2 G3 G4 TYPICAL APPLICATIONS • Point-to-point radio • Point-to-multipoint radio • Sat-com • Electronic Warfare ELECTRICAL SPECIFICATIONS PARAMETER CONDITIONS MIN TYP MAX UNITS Small Signal Gain 12.5-15.5 GHz, Vd = 6 V, 1200 mA 32 35 36 dB Input Return Loss 12.5-15.5 GHz, Vd = 6 V, 1200 mA -12 -10 dB Output Return Loss 12.5-15.5 GHz, Vd = 6 V, 1200 mA -15 -12 dB Output Power at 1dB compression point 12.5-15.5 GHz, Vd = 6 V, 1200 mA 30 33 35 dBm Output IP3 12.5-15.5 GHz, Vd = 6 V, 1200 mA 40 dBm Drain Current 6.0 V 800 1100 1400 mA Typical gate voltage -0.5 -0.4 -0.3 V Note: TAMBIENT = +25°C, Z0 = 50Ω Performance for on-wafer measurements Website: www.filtronic.com |
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