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FMA3011 Datasheet(PDF) 2 Page - Filtronic Compound Semiconductors

Part # FMA3011
Description  12.7-16GHZ MMIC POWER AMPLIFIER
Download  9 Pages
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Manufacturer  FILTRONIC [Filtronic Compound Semiconductors]
Direct Link  http://www.filtronic.co.uk/
Logo FILTRONIC - Filtronic Compound Semiconductors

FMA3011 Datasheet(HTML) 2 Page - Filtronic Compound Semiconductors

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Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
2
Datasheet v4.0
FMA3011
ABSOLUTE MAXIMUM RATINGS:
Note: Exceeding any one of these absolute
maximum ratings may cause permanent damage to
the device.
PAD LAYOUT:
PARAMETER
SYMBOL
ABSOLUTE
MAXIMUM
Max Input Power
Pin
+25dBm
Gate Voltage
VG1
-2V
Drain Voltage
VDD
+10V
Power Dissipation
Pdiss
3.5W
Operating Temp
Toper
-40°C to +85°C
Storage Temp
Tstor
-55°C to +150°C
PAD
REF
PAD
NAME
DESCRIPTION
PIN
COORDINATES
(µm)
A
I
RF in
(96,503)
B
D1A
1st Stage Drain
(671,2068)
C
G23A
2nd and 3rd Gate
(1721, 2068)
D
D2AA
2nd Drain Direct
(2171,2068)
E
D2AB
2nd Drain With Resistor
(2321,2068)
F
D3AB
3rd Drain With Resistor
(2471,2068)
G
D3AC
Alt 3rd Drain Direct
(3198,2040)
H
D3AA
3rd Stage Drain Direct
(3560,2068)
I
O
RF Output
(3604,1698)
J
D3BA
3rd Stage Drain Direct
(3560,132)
K
D3BC
Alt 3rd Drain Direct
(3198,160)
L
D3BB
3rd Drain With Resistor
(2471,132)
M
D2BB
2nd Drain With Resistor
(2321,132)
N
D2BA
2nd Drain Direct
(2171,132)
O
G23B
2nd and 3rd Gate
(1721,132)
P
D1B
1st Stage Drain
(671,132)
H
G
D E F
B
C
I
A
P
O
NML
K
J
Note: Co-ordinates are referenced from the bottom left
hand corner of the die to the centre of bond pad
opening. Pads without identifiers are ground connections
used in wafer testing.
DIE SIZE (
µm)
DIE THICKNESS (
µm)
MIN. BOND PAD PITCH
(
µm)
MIN. BOND PAD OPENING
(
µm x µm )
3700 x 2200
100
150um
100 x 100


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