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1N4151 Datasheet(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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1N4151 Datasheet(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
1 / 3 page www.galaxycn.com BL BLGALAXY ELECTRICAL Document Number 0268002 1. FEATURES Silicon epitaxial planar diode High speed switching diode 500 mW power dissipation Weight: 0.004 ounces, 0.13 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. MAXIMUM RATINGS UNITS Reverse voltage VR V Peak reverse voltage VRM V Average forw ard rectified current half w ave rectification w ith resistive load @ T A=25 and f 50Hz Forw ard surge current @ t<1s and T J=25 IFSM mA Pow er dissipation @ T A=25 Ptot mW Junction temperature TJ Storage temperature range TSTG ELECTRICAL CHARACTERISTICS UNITS Forw ard voltage @ I F=10mA VF V Leakage current @ V R=50V IR nA @ V R=20V T J=150 IR μA Capacitance @ V F=VR=0V CJ pF Reverse breakdow n voltage tested w ith 5μA pulses Reverse recovery time from I F=10mA to IR=10mA to IR=1mA ns from I F=10mA to IR=1mA, VR=6V. RL=100Ω. ns Thermal resistance junction to ambient RθJA K/W Rectification efficiency @ 100MHz,V RF=2V ηv - GALAXY ELECTRICAL trr - - MIN TYP 1501) 175 -55 --- +175 1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature. 4 2 V(BR)R 75.0 - - 0.45 - - 3501) MAX 2 - - - - IAV 500.0 5001) mA - - 1.0 - 1N4151 MECHANICAL DATA SMALL SIGNAL SWITCHING DIODE Case: DO-35,glass case REVERSE VOLTAGE : 50 V CURRENT: 0.15 A Polarity: Color band denotes cathode DO-35(GLASS) 1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature. - 50.0 50.0 V 1N4151 50.0 75.0 |
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