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| 1N914 |
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 BILIN
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1.1 1.0 0.8 0.9 0.7 0 2 4 6 8 10V TJ=25 f=1MHz Ctot(OV) VR Ctot(VR) VO 5K 2nF VRF=2V D.U.T. 60 BLGALAXY ELECTRICAL www.galaxycn.com Document Number 0268015 3. 0 100 200℃ 10 1 nA 3 10 2 10 4 10 VR=20V 10 mA rF 2 10 3 10 4 10 1 -2 10 -1 10 1 1 0 2 10 IF TJ=25℃ f=1KHz RATINGS AND CHARACTERISTIC CURVES 1N914,1N914A,1N914B FIG.6 -- LEAKAGE CURRENT VERSUS JUNCTION TEMPERATUREFF FIG.7 -- DYNAMIC FORWARD RESISTANCE FFFVERSUS FORWARD CURRENT FIG.4 -- RECTIFICATION EFFICIENCY JJJJJJJJMEASUREMENT CIRCUIT FIG.5 -- RELATIVE CAPACITANCE VERSUS JJJJJJJJJJJJJJ VOLTAGE |
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