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P4KE43 Datasheet(PDF) 3 Page - Galaxy Semi-Conductor Holdings Limited |
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P4KE43 Datasheet(HTML) 3 Page - Galaxy Semi-Conductor Holdings Limited |
3 / 4 page M in M ax P4KE 62 55.8 68.8 1.0 P4KE 62A 58.9 65.1 1.0 P4KE 68 61.2 74.8 1.0 P4KE 68A 64.6 71.4 1.0 P4KE 75 67.5 82.5 1.0 P4KE 75A 71.3 78.8 1.0 P4KE 82 73.8 90.2 1.0 P4KE 82A 77.9 86.1 1.0 P4KE 91 81.9 100 1.0 P4KE 91A 86.5 95.5 1.0 P4KE 100 90.0 110 1.0 P4KE 100A 95.0 105 1.0 P4KE 110 99.0 121 1.0 P4KE 110A 105 116 1.0 P4KE 120 108 132 1.0 P4KE 120A 114 126 1.0 P4KE 130 117 143 1.0 P4KE 130A 124 137 1.0 P4KE 150 135 165 1.0 P4KE 150A 143 158 1.0 P4KE 160 144 176 1.0 P4KE 160A 152 168 1.0 P4KE 170 153 187 1.0 P4KE 170A 162 179 1.0 P4KE 180 162 198 1.0 P4KE 180A 171 189 1.0 P4KE 200 180 220 1.0 P4KE 200A 190 210 1.0 P4KE 220 198 242 1.0 P4KE 220A 209 231 1.0 P4KE 250 225 275 1.0 P4KE 250A 237 267 1.0 P4KE 300 270 330 1.0 P4KE 300A 285 315 1.0 P4KE 350 315 385 1.0 P4KE 350A 332 368 1.0 P4KE 400 360 440 1.0 P4KE 400A 380 420 1.0 P4KE 440 396 484 1.0 P4KE 440A 418 462 1.0 NOTE: (1) V(BR) measured after IT applied for 300 s, IT=square w ave pulse or equivalent (2) Surge current w aveform per Fig. 3 and derated Fig. 2 (3) For bidirectional types having VWM of 10 volts and less, the ID limit is doubled (4) All terms and symbols are consistent w ith ANSI/IEEE C62.35 ELECTRICAL CHARACTERISTICS at(TA=25 unless otherw ise noted) TABLE 1(Cont' d) Device type 0.73 548 0.110 185 138 145 136 154 175 171 162 77.8 0.105 0.105 89.2 0.106 0.106 0.106 0.107 125 5.0 0.104 0.104 0.104 0.106 0.104 0.105 0.105 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.108 328 244 234 1.2 1.6 1.6 246 344 0.110 360 0.110 243 5.0 0.93 430 0.110 3.9 144 137 158 3.4 3.5 3.1 3.2 2.5 118 4.7 4.1 4.3 3.7 5.0 1.7 5.0 5.0 5.0 5.0 5.0 1.8 2.1 2.9 5.0 5.0 5.0 5.0 5.0 5.0 85.5 53.0 55.1 58.1 60.7 64.1 81.0 66.4 70.1 73.7 85.0 98.0 92.0 108 89.0 50.2 5.0 4.5 113 131 202 5.0 5.0 5.0 5.0 1.1 2.8 1.2 103 146 5.0 1.6 258 97.2 94.0 152 105 5.0 0.107 5.0 2.3 173 0.107 5.0 2.6 2.4 165 0.107 5.0 1.5 274 5.0 219 2.2 179 1.9 215 187 0.107 0.107 0.108 111 5.0 1.2 344 130 5.0 1.7 230 121 5.0 0.108 128 5.0 0.110 1.9 207 0.108 5.0 1.4 287 0.110 256 5.0 1.0 414 284 5.0 0.79 504 0.110 324 5.0 0.70 574 0.110 300 5.0 0.83 482 Breakdow n voltage V(BR) (V)(NOTE1) Test current at IT (mA) 342 5.0 214 5.0 102 5.0 5.0 Stand-off voltage VWM (V) Maximum reverse leakge at VWM ID (NOTE3)(μA) Maximum peak pulse IPPM(NOTE2) (A) Maximum clamping voltage at IPPM VC(V) Maximum temperature coefficient of V(BR) (%/ ) 0.110 376 5.0 0.66 602 0.110 356 5.0 0.63 631 BLGALAXY ELECTRICAL Document Number 0285001 3. www.galaxycn.com |
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