EDB105S datasheet(2/2 Pages) BILIN

Part #	EDB105S

Description	SILICON BRIDGE RECTIFIERS

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Manufacturer	BILIN [Galaxy Semi-Conductor Holdings Limited]

Direct Link	http://www.galaxycn.com

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2 / 2 page

-1.0A

-0.25A

0

+0.5A

trr

1cm

PULSE

GENERATOR

(NOTE2)

D.U.T.

1

NONIN-

DUCTIVE

50

N 1.

10

N1.

OSCILLOSCOPE

(NOTE1)

(+)

25VDC

(approx)

(-)

.01

1.0

10

040

60

0.1

20

100 120 140

80

TJ=25

100

TJ=100

TJ=150

1

0

25

50

75

100

125

150

2

0

Single phaes

half wave 60Hz

inductive load

resistive or

10

20

1

10

100

8.3ms Single Half Sine Wave

TJ=25

40

50

30

60

0

5

50

CHARACTERISTICS

FIG.2 -- TYPICAL FORWARD CURRENT

DERATING CURVE

NOTES:1.RISETIME=7ns MAX. INPUT IMPEDANCE=1MΩ.22pF

2.RISETIME=10ns MAX. SOURCEIMPEDANCE=5OΩ

SETTIMEBASEFOR

10 ns /cm

INSTANTANEOUS FORWARD VOLTAGE, VOLTS

AMBIENT TEMPERATURE (

)

FIG.5 -- MAXIMUM NON-REPETITIVEFORWARDSURGECURRENT

FIG.6 -- TYPICAL JUNCTION CAPACITANCE

NUMBER OF CYCLES AT 60Hz

EDB101S --- EDB106S

PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)

FIG.4 -- TYPICAL INSTANTANEOUS FORWARD

REVERSE VOLTAGE, VOLTS

FIG.3 -- TYPICAL REVERSE CHARACTERISTICS

RATINGS AND CHARACTERISTIC CURVES

FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC

BLGALAXY ELECTRICAL

www.galaxycn.com

Document Number 0287008

2.

10

20

.1

10

100

40

100

2

200

1

4

60

4

6

1

EDB105S-EDB106S

EDB101S-EDB104S

TJ=25

0 .8

1 .0

1 .2 1 .4

0 .1

1 .0

10

TJ=125

P ulse W idth

=300

u S

0 .6

0 .4

.0 1

0 .2

0

.001

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