FAST SWITCHING THYRISTOR
ATF1040
Repetitive voltage up to
2000 V
Mean on-state current
1075 A
Surge current
14 kA
FINAL SPECIFICATION
Turn-off time
50 µs
mag 97 - ISSUE : 06
Symbol
Characteristic
Conditions
Tj
[°C]
Value
Unit
BLOCKING
V RRM
Repetitive peak reverse voltage
125
2000
V
V RSM
Non-repetitive peak reverse voltage
125
2100
V
V DRM
Repetitive peak off-state voltage
125
2000
V
I RRM
Repetitive peak reverse current
V=VRRM
125
150
mA
I DRM
Repetitive peak off-state current
V=VDRM
125
150
mA
CONDUCTING
I T (AV)
Mean on-state current
180° sin, 50 Hz,Th=55°C, double side cooled
1075
A
I T (AV)
Mean on-state current
180° sin, 1 kHz,Th=55°C, double side cooled
1000
A
I TSM
Surge on-state current, non repetitive
sine wave, 10 ms
125
14
kA
I² t
I² t
without reverse voltage
980 x1E3
A²s
V T
On-state voltage
On-state current =
2000 A
25
2.6
V
V T(TO)
Threshold voltage
125
1.40
V
r T
On-state slope resistance
125
0.414
mohm
SWITCHING
di/dt
Critical rate of rise of on-state current, min
From 75% VDRM up to 1200 A, gate 10V 5 ohm
125
500
A/µs
dv/dt
Critical rate of rise of off-state voltage, min
Linear ramp up to 70% of VDRM
125
500
V/µs
td
Gate controlled delay time, typical
VD=100V, gate source 20V, 10 ohm , tr=1 µs
25
0.6
µs
tq
Circuit commutated turn-off time
di/dt =
20
A/µs, I= 1000 A
I =
800
A
125
50
µs
dV/dt =
200 V/µs , up to 75%
VDRM
Q rr
Reverse recovery charge
di/dt =
60
A/µs, I= 1000 A
I =
1000
A
125
620
µC
I rr
Peak reverse recovery current
VR =
50
V
227
A
I H
Holding current, typical
VD=5V, gate open circuit
25
500
mA
I L
Latching current, typical
VD=5V, tp=30µs
25
850
mA
GATE
V GT
Gate trigger voltage
VD=5V
25
3.5
V
I GT
Gate trigger current
VD=5V
25
350
mA
V GD
Non-trigger gate voltage, min.
VD=VDRM
125
0.25
V
V FGM
Peak gate voltage (forward)
25
30
V
I FGM
Peak gate current
25
10
A
V RGM
Peak gate voltage (reverse)
25
5
V
P GM
Peak gate power dissipation
Pulse width 100 µs
25
150
W
P G(AV)
Average gate power dissipation
25
3
W
MOUNTING
R th(j-h)
Thermal impedance, DC
Junction to heatsink, double side cooled
26
°C/kW
T j
Operating junction temperature
-30 / 125
°C
F
Mounting force
14.0 / 17.0
kN
Mass
500
g
tq code
D 10 µs C 12 µs B 15 µs A 20 µs L 25 µs
ORDERING INFORMATION : ATF1040 S 20 S
tq code
M 30 µs N 35 µs P 40 µs R 45 µs S 50 µs
standard specification
VDRM&VRRM/100
T 60 µs U 70 µs W 80 µs X 100µs Y 150µs
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY
Tel. int. +39/(0)10 6556549 - (0)10 6556488
Fax Int. +39/(0)10 6442510
Tx 270318 ANSUSE I -
ANSALDO
Ansaldo Trasporti s.p.a.
Unita' Semiconduttori
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