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BC858W Datasheet(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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BC858W Datasheet(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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1 / 3 page  BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor BC856W/BC857W/BC858W Document number: BL/SSSTF046 www.galaxycn.com Rev.A 1 FEATURES Ideally suited for automatic insertion. Power dissipation.(PC=200mW) APPLICATIONS General purpose switching and amplification application. SOT-323 ORDERING INFORMATION Type No. Marking Package Code BC856W 3As/3Bs SOT-323 BC857W 3E/3F/3G SOT-323 BC858W 3J/3K/3L SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage BC856W BC857W BC858W -80 -50 -30 V VCEO Collector-Emitter Voltage BC856W BC857W BC858W -65 -45 -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -100 mA PC Collector Dissipation 200 mW Tj,Tstg Junction and Storage Temperature -65~150 ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Pb Lead-free |
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Similar Description - BC858W |
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