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KTD1304 Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited

Part No. KTD1304
Description  NPN Silicon Epitaxial Planar Transistor
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Maker  BILIN [Galaxy Semi-Conductor Holdings Limited]
Homepage  http://www.galaxycn.com
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 2 page
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BL Galaxy Electrical
Production specification
NPN Silicon Epitaxial Planar Transistor
KTD1304
Document number: BL/SSSTC113
www.galaxycn.com
Rev.A
2
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=100μA,IE=0
25
V
Collector-emitter breakdown voltage V(BR)CEO
IC=1mA,IB=0
20
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA,IC=0
12
V
Collector cut-off current
ICBO
VCB=25V,IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=12V,IC=0
0.1
μA
DC current gain
hFE
VCE=2V,IC=4mA
200
800
Collector-emitter saturation voltage
VCE(sat)
IC=100mA, IB=10mA
0.25
V
Base-emitter saturation voltage
VBE(sat)
IC=100mA, IB=10mA
1
V
Transition frequency
fT
VCE=10V, IC= 1mA
60
MHz
Collector output capacitance
Cob
VCB=10V,IE=0,f=1MHz
10
pF
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified




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