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MMDT3946 Datasheet(PDF) 3 Page - Galaxy Semi-Conductor Holdings Limited |
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MMDT3946 Datasheet(HTML) 3 Page - Galaxy Semi-Conductor Holdings Limited |
3 / 5 page BL Galaxy Electrical Production specification Small Signal Surface Mount Transistor MMDT3946 Document number: BL/SSSTE004 www.galaxycn.com Rev.A 3 SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V(BR)CBO Collector-base breakdown voltage IC=-10μA,IE=0 -40 V V(BR)CEO Collector-emitter breakdown voltage IC=-1mA,IB=0 B -40 V V(BR)EBO Emitter-base breakdown voltage IE=-10μA,IC=0 -5 V ICEX collector cut-off current IE = 0,VCB = -30V - -0.05 μA IBL Base cut-off current IC = 0, VEB = -3V - -0.05 μA hFE DC current gain VCE =-1V,IC= -0.1mA VCE =-1V,IC =-1mA VCE =-1V,IC =-10mA VCE =-1V,IC =-50mA VCE =-1V,IC =-100mA 60 80 100 60 30 - - 300 - - IC =-10mA,IB =-1mA B - -250 mV VCE(sat) collector-emitter saturation voltage IC =-50mA,IB =-5mA B - -400 mV IC =-10mA,IB =-1mA B -650 -850 mV VBE(sat) base-emitter saturation voltage IC =-50mA, IB =-5mA B - -950 mV Cobo Output capacitance IE=0, VCB=-5V; f =1MHz - 4.5 pF Cobi Input capacitance IC=0, VEB=-0.5V; f =1MHz 10 pF fT transition frequency IC=-10mA,VCE=-20V,f=100MHz 250 - MHz NF noise figure IC=-0.1mA,VCE=-5V - 4 dB td delay time - 35 ns tr rise time VCC=-3V,VBE(off)=0.5V IC=-10mA IB1=-IB2=-1mA - 35 ns ts storage time - 225 ns tf fall time VCC=-3V,IC=-10mA IB1=IB2=-1mA - 75 ns TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified |
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