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S9013 Datasheet(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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S9013 Datasheet(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
1 / 4 page BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor S9013 Document number: BL/SSSTC082 www.galaxycn.com Rev.A 1 FEATURES High Collector Current.(IC= 500mA ) Pb Lead-free Complementary To S9012. Excellent HFE Linearity. Power dissipation.(PC=300mW) APPLICATIONS High Collector Current. SOT-23 ORDERING INFORMATION Type No. Marking Package Code S9013 J3 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 500 mA PC Collector Dissipation 300 mW Tj,Tstg Junction and Storage Temperature -55~150 ℃ |
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